參數(shù)資料
型號(hào)： LE28BU167
文件頁(yè)數(shù)： 16/46頁(yè)
文件大?。?/td> 1452K
代理商： LE28BU167
LE28BU167
327 PGM T6a.1
6a: CFI Query Identification String for E
2
Bank
Address
Data
10H
0051H
11H
0052H
12H
0059H
13H
0109H
14H
0000H
15H
0000H
16H
0000H
17H
0000H
18H
0000H
19H
0000H
Data
Query Unique ASCII string "QRY"
Primary OEM command set
Address for Primary Extended Table (00H = none exists)
Alternate OEM command set (00H = none exists)
Address for Alternate OEM extended Table (00H = none exits)
327 PGM T6b.2
6b: System Interface Information for E
2
Bank
Address
Data
1BH
0022H
Data
V
DD
Min. (Program/Erase)
DQ4-DQ7: Volts, DQ3-DQ0: millivolts
V
DD
Max. (Program/Erase)
DQ4-DQ7: Volts, DQ3-DQ0: millivolts
Vpp min. (00H = no Vpp pin)
Vpp max. (00H = no Vpp pin)
Typical time out for Word Program 2
N
us
Typical time out for min. size Page Write 2
N
us
Typical time out for individual Sector Erase 2
N
ms
Typical time out for Bank Erase 2
N
ms
Maximum time out for Word Program 2
N
times typical
Maximum time out for Page Write 2
N
times typical
Maximum time out for individual Sector Erase 2
N
times typical
Maximum time out for Bank Erase 2
N
times typical
1CH
0028H
1DH
1EH
1FH
20H
21H
22H
23H
24H
25H
26H
0000H
0000H
0005H
0012H
0002H
0006H
0001H
0001H
0001H
0001H
6c: Device Geometry Information for E
2
Bank
Address
Data
000DH
0001H
Data
Device size = 2
N
Byte ("D"> 2
13
= 8 KBytes = 64 Kbits)
Flash Bank Device Interface description (Refer to CFI publica
tion 100)
(x16 asynchronous)
Maximum number of bytes in Page Write = 2
N
(00H = not
supported)
27H
28H
29H
2AH
0000H
0001H
2BH
2CH
2DH
2EH
2FH
30H
0000H
0001H
007FH
0000H
0001H
0000H
Number of Erase Block Regions within device
Erase Block Region 1 Information (Sector)
(refer to the CFI specification or publication 100)
y = 127 +1 = 128 sectors (007FH = 127)
z = 32 Bytes/sector = 1 x 256 Bytes
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