
LE28BU167
327 PGM T4a.1
4b: System Interface Information for Flash Bank 1
Address
Data
1BH
0022H
Data
V
DD
Min. (Program/Erase)
DQ4-DQ7: Volts, DQ3-DQ0: millivolts
V
DD
Max. (Program/Erase)
DQ4-DQ7: Volts, DQ3-DQ0: millivolts
Vpp min. (00H = no Vpp pin)
Vpp max. (00H = no Vpp pin)
Typical time out for Word Program 2
N
us
Typical time out for min. size Page Write 2
N
us (00H = not supported)
Typical time out for individual Sector Erase 2
N
ms
Typical time out for Bank Erase 2
N
ms
Maximum time out for Word Program 2
N
times typical
Maximum time out for Page Write 2
N
times typical
Maximum time out for individual Sector Erase
2
N
times typical
Maximum time out for Bank Erase 2
N
times typical
1CH
0028H
1DH
1EH
1FH
20H
21H
22H
23H
24H
25H
26H
0000H
0000H
0004H
0000H
0003H
0006H
0001H
0000H
0001H
0001H
327 PGM T4b.2
4c: Device Geometry Information
Address
27H
28H
Data
0014H
0001H
Data
Bank size = 2
N
Byte (‘14H’ > 2
20
= 1Megabyte = 8 Megabit)
Flash Bank Device Interface description (Refer to CFI publica
tion 100)
(x16 asynchronous)
Maximum number of bytes in Page Write = 2
N
(00H = not
supported)
29H
2AH
0000H
0000H
2BH
2CH
2DH
2EH
2FH
30H
31H
32H
33H
34H
0000H
0002H
00FFH
0001H
0008H
0000H
000FH
0000H
0000H
0001H
Number of Erase Block Regions within device
Erase Block Region 1 Information (Sector)
(refer to the CFI specification or publication 100)
y = 511 +1 = 512 sectors (01FFH = 511)
z = 2 KByte/sector = 8 x 256 Bytes
Erase Block Region 2 Information (Block)
(refer to the CFI specification or publication 100)
y = 15 + 1 = 16 blocks
z = 64 KByte/block = 256 x 256 Bytes (0100H = 64K)
4a: CFI Query Identification String for Flash Bank 1
Address
Data
10H
0051H
11H
0052H
12H
0059H
13H
0108H
14H
0000H
15H
0000H
16H
0000H
17H
0000H
18H
0000H
19H
0000H
1AH
0000H
Data
Query Unique ASCII string "QRY"
Primary OEM command set
Address for Primary Extended Table (00H = none exists)
Alternate OEM command set (00H = none exists)
Address for Alternate OEM extended Table (00H = none exits)