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參數(shù)資料
| 型號： | LDTA123EET1G |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Bias Resistor Transistors |
| 中文描述： | 偏置電阻晶體管 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 67K |
| 代理商： | LDTA123EET1G |
LESHAN RADIO COMPANY, LTD.
LDTA123EET1-2/3
LDTA123EET1
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
I
CBO
–
–
100
nAdc
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
I
CEO
–
–
500
nAdc
Emitter-Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0 )
I
EBO
–
–
2.3
mAdc
Collector-Base Breakdown Voltage (I
C
= 10
μ
A, I
E
= 0)
V
(BR)CBO
50
–
–
Vdc
Collector-Emitter Breakdown Voltage (Note 3)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50
–
–
Vdc
ON CHARACTERISTICS
(Note 3)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
h
FE
8.0
–
Collector-Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 5 mA)
V
CE(sat)
–
–
0.25
Vdc
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 k
)
V
OL
–
–
0.2
Vdc
3. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
Output Voltage (on)
1.5
2.2
2.
9
Resistor Ratio
R
1
/R
2
0.8
1
1.2
Input Resistor
R
1
k
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 k
)
Output Voltage (off)
V
OH
–
–
Vdc
4.9
15
Version 1.0
Figure 1. Derating Curve
250
200
150
100
50
050
0
T
A
, AMBIENT TEMPERATURE (
°
C)
50
100
150
P
R
JA
= 600
°
C/W
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| LDTA123EM3T5G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Bias Resistor Transistors |
| LDTA123JET1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Digital transistors (built-in resistors) |
| LDTA123JM3T5G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Bias Resistor Transistors |
| LDTA124EET1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Bias Resistor Transistor |
| LDTA124EM3T5G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Bias Resistor Transistors |
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