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參數(shù)資料
| 型號(hào)： | LDTA123JET1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Digital transistors (built-in resistors) |
| 中文描述： | 數(shù)字晶體管（內(nèi)置電阻） |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 167K |
| 代理商： | LDTA123JET1 |
Digital transistors (built-in resistors)
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the
input. They also have the advantage of almost
completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for
operation, making device design easy.
PNP digital transistor
(Built-in resistor type)
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R1
R2
1
2
3
SC-89
LDTA123JET1
MAXIMUM RATINGS
(TA = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
VCEO
IC
50
Vdc
Collector-Emitter Voltage
50
Vdc
Collector Current
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation,
FR–4 Board (Note 1.) @ TA = 25
°
C
Derate above 25
°
C
PD
200
1.6
mW
mW/
°
C
Thermal Resistance, Junction to Ambient (Note 1.)
R
θ
JA
PD
600
°
C/W
Total Device Dissipation,
FR–4 Board (Note 2.) @ TA = 25
°
C
Derate above 25
°
C
300
2.4
mW
mW/
°
C
Thermal Resistance, Junction to Ambient (Note 2.)
R
θ
JA
TJ, Tstg
400
°
C/W
Junction and Storage Temperature Range
–55 to +150
°
C
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0
×
1.0 Inch Pad
STRUCTURE:
FEATURES:
LDTA123JET1
=
6
M
DEVICE MARKING
LESHAN RADIO COMPANY, LTD.
LDTA123JET1
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1
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3
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