參數(shù)資料
型號(hào): LDT3019
英文描述: TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 600MA I(C) | LID
中文描述: 晶體管|晶體管|叩| 80V的五(巴西)總裁| 600毫安一(c)|蓋
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 64K
代理商: LDT3019
Micro-LID Transistors
LDT3019 and LDT3019T
Description:
The LDT3019 (untinned) and LDT3019T (tinned) are NPN silicon transistors in
very small, rugged, surface mount, 4-post ceramic packages (Micro International
manufactured package p/n 4-075-1). The LDT3019 and LDT3019T meet the
general specifications of the 2N3019 transistor. The 4-075-1 Micro-LID package
is a 4-post, leadless ceramic carrier which can be provided with gold metallized
or pre-tinned lands, and is approved for military, medical implant, sensor, and
high reliability applications. The LDT3019 and LDT3019T can be provided with
special feature options such as additional temperature cycling and screening.
Maximum Ratings:
Parameter
Symbol
Rating
Collector-Base Voltage
Vcbo
140 V
Collector-Emitter Voltage
Vceo
80 V
Emitter-Base Voltage
Vebo
7 V
Collector Current
Ic
600 mA
Total Dissipation
Pt
350 mW
Operating Junction Temperature
Tj
150
°
C
Storage Temperature
Tstg
-65
°
C to 150
°
C
Operating Temperature
Toper
55
°
C to 125
°
C
1/3 January 1997
www.microlid.com sales@microlid.com
相關(guān)PDF資料
PDF描述
LDT3019T TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 600MA I(C) | LID
LDT3251A TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 200MA I(C) | LID
LDT3251AT TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 200MA I(C) | LID
LDT3906 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 200MA I(C) | LID
LDT3906T TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 200MA I(C) | LID
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