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參數(shù)資料
| 型號： | LDT2857T |
| 英文描述： | TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | LID |
| 中文描述： | 晶體管|晶體管|叩| 15V的五（巴西）總裁| 50mA的一（c）|蓋 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 65K |
| 代理商： | LDT2857T |
Micro-LID Transistors
LDT2857 and LDT2857T
Description:
The LDT2857 (untinned) and LDT2857T (tinned) are NPN silicon 1.4 GHz
wideband transistors in very small, rugged, surface mount, 4-post ceramic
packages (Micro International manufactured package p/n 4-075-1). The LDT2857
and LDT2857T meet the general specifications of the 2N2857 transistor. The
4-075-1 Micro-LID package is a 4-post, leadless ceramic carrier which can be
provided with gold metallized or pre-tinned lands, and is approved for military,
medical implant, sensor, and high reliability applications. The LDT2857 and
LDT2857T can be provided with special feature options such as additional
temperature cycling, screening, and matching Hfe selection.
Maximum Ratings:
Parameter
Symbol
Rating
Collector-Base Voltage
Vcbo
30 V
Collector-Emitter Voltage
Vceo
15 V
Emitter-Base Voltage
Vebo
3 V
Collector Current
Ic
50 mA
Total Dissipation
Pt
350 mW
Operating Junction Temperature
Tj
150
°
C
Storage Temperature
Tstg
-65
°
C to 150
°
C
Operating Temperature
Toper
-55
°
C to 125
°
C
1/3 January 1997
www.microlid.com sales@microlid.com
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| LDT565630T-001 | 功能描述:TRANSFORMER 6.0UH 1.50A PHOTO RoHS:是 類別:變壓器 >> 專用 系列:- 標準包裝:1 系列:- 電感:- 適用于相關產(chǎn)品:- 尺寸/尺寸:12.50mm L x 9.60mm W 高度 - 座高（最大）:7.60mm 安裝類型:表面貼裝 其它名稱:MT7214CT |
| LDT565630T-002 | 功能描述:TRANSFORMER 14.5UH 1.10A PHOTO RoHS:是 類別:變壓器 >> 專用 系列:- 標準包裝:1 系列:- 電感:- 適用于相關產(chǎn)品:- 尺寸/尺寸:12.50mm L x 9.60mm W 高度 - 座高（最大）:7.60mm 安裝類型:表面貼裝 其它名稱:MT7214CT |
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