參數(shù)資料
型號(hào)： LD1010D
廠商： Electronic Theatre Controls, Inc.
英文描述： High Performance N-Channel POWERJFET with PN Diodes
中文描述： 高性能N溝道POWERJFET的pn二極管
文件頁(yè)數(shù)： 2/5頁(yè)
文件大小： 662K
代理商： LD1010D
Thermal Resistance
Symbol
Parameter
DPAK
Ratings
80
1.6
Units
R
Θ
JA
R
Θ
JC
Thermal Resistance Junction-to-Ambient
Thermal Resistance Junction-to-Case
°
C/W
°
C/W
Electrical Specifications
(TA = +25
°
C, unless otherwise noted.)
The
φ
denotes a specification which apply over the full operating temperature range.
Symbol
Parameter
Static
BV
DSX
Breakdown Voltage
Drain to Source
BV
GDO
Breakdown Voltage
Gate to Drain
BV
GSO
Breakdown Voltage
Gate to Source
R
DS(ON
)
Static Drain to Source
1
On
Resistance (Current flows
drain-to-source) See Fig. 1
V
GS(TH)
Gate Threshold Voltage
Dynamic
Q
G
Total Gate Charge
Q
GD
Gate to Drain Charge
Q
GS
Gate to Source Charge
Q
SW
Switching Charge
R
G
Gate Resistance
T
D(ON
)
Turn-on Delay Time
T
R
Rise Time
T
D(OFF)
Turn-off Delay
T
F
Fall Time
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
GS
Gate-Source Capacitance
C
GD
Gate-Drain Capacitance
C
DS
Drain-Source Capacitance
PN Diode
I
R
Reverse Leakage
V
F
Forward Voltage
V
F
Forward Voltage
V
F
Forward Voltage
Qrr
Reverse Recovery Charge
Notes:
1.
Pulse width <= 500
μ
s, duty cycle < = 2%
Conditions
Min.
24
Typ.
Max.
Units
V
I
D
= 0.5 mA
V
GS
= -4 V
I
G
= -50
μ
A
-28
V
I
G
= -1 mA
-12
-10
V
I
G
= 40 mA, I
D
=10A
I
G
= 10 mA, I
D
=10A
I
G
= 5 mA, I
D
=10A
V
DS
=0.1 V, I
D
=250
μ
A
V
Drive
=5V, I
D
=10A,V
DS
=15V
V
DD
=16V, I
D
=15A
V
Drive
= 5 V
Clamped Inductive Load
4.0
4.5
4.6
-800
20
12
1.5
13.5
0.4
5
12
2
10
3000
900
2250
750
150
0.25
700
900
1100
20
4.5
5.0
-600
m
m
mV
nC
nC
nC
nC
ns
-1200
V
DS
=10V, V
GS
= -5 V, 1MHz.
pF
V
R
=20V, Vgs = -4V
I
F
= 1 A
I
F
= 10 A
I
F
= 20 A
I
s
= 20 A di/dt = 100A/us,
mA
mV
mV
mV
nC
0.3
Lovoltech, Inc. -
3970 Freedom Circle - Santa Clara, CA 95054 -USA
Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com
LD1010D
Product Specification
2
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