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參數(shù)資料
| 型號(hào)： | LD1003S |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | High Performance N-Channel POWERJFET with Schottky Diode |
| 中文描述： | 高性能N溝道POWERJFET與肖特基二極管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 693K |
| 代理商： | LD1003S |
Added Fast Recovery Schottky Diode in same package
Applications
DC-DC Converters
Synchronous Rectifiers
PC Motherboard Converters
Step-down power supplies
Brick Modules
VRM Modules
DPAK Pin Assignments
(Surface Mount)
PWRLITE LD1003S
High Performance N-Channel
P
OWERJFET
TM
with Schottky Diode
Features
Trench Power JFET with low threshold voltage Vth.
Device fully “ON” with Vgs = 0.7V
Optimum for “Low Side” Buck Converters
Optimized for Secondary Rectification in isolated DC-DC
Low Rg and low Cds for high speed switching
No “Body Diode”; extremely low Cds
Description
The Power JFET transistor from Lovoltech is a device that
presents a Low Rdson allowing for improved efficiencies in DC-
DC switching applications. The device is designed with a low
threshold such that drivers can operate at 5V, which reduces the
driver power dissipation and increases the overall efficiency.
Lower threshold produces faster turn-on/turn-off, which
minimizes the required dead time. The transistor “No Body
Diode” provides a very low associated parasitic capacitance Cds.
A Schottky Diode is added for applications where a freewheeling
diode is required. Ringing is also reduced so that a lower voltage
device may be a better solution.
1
2
3
4
DPAK (LD1003S)
S
S
D
G
And Schottky Diode
Case TO252
N – Channel JFET
Pin Definitions
Pin Number
1
2, 4
3
Absolute Maximum Ratings
Pin Name
Gate
Drain
Source
Pin Function Description
Gate.
Transistor Gate
Drain.
Transistor Drain
Source.
Transistor Source
Product Summary
Rdson (
)
0.0045
V
DS
(V)
24V
I
D
(A)
50
Parameter
Symbol
V
DS
V
GS
V
GD
I
D
I
D
E
AS
Ratings
24
-10
-28
50
100
220
Units
V
V
V
A
A
mJ
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Drain-to-Source Avalanche Energy at 25
°
C
(V
DD
= 5V
DC
, IL=60A
PK
, L=0.3mH, R
G
=100
)
Junction Temperature
Storage Temperature
Lead Soldering Temperature, 10 seconds
Power Dissipation (Derated at 25
°
C)
T
J
T
STG
T
P
D
-55 to 150
°
C
-65 to 150
°
C
260
°
C
80
°
C
°
C
°
C
W
LD1003S.Rev 0.93 PR 12-04
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