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參數(shù)資料
| 型號： | LC35W1000BM |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
| 中文描述： | 異步硅門100萬（131072字× 8位）的SRAM |
| 文件頁數(shù)： | 4/9頁 |
| 文件大小： | 165K |
| 代理商： | LC35W1000BM |
No. 6624-4/9
LC35W1000BM, BTS-70U/10U
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Supply volgate
V
CC
V
IH
V
IL
2.7
3.3
3.6
V
High-level input voltage
0.8V
CC
–0.3
*
V
CC
+ 0.3
0.2V
CC
V
Low-level input voltage
V
DC Allowable Operating Range
at Ta = –40 to +85°C
Note:
*
The minimum value is –3.0 V for pulse width under 50 ns.
Note:
*
Reference values when V
CC
= 3.0 V and Ta = 25°C.
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Input leakage current
I
LI
V
IN
= 0 to V
CC
V
CE1
= V
IH
or V
CE2
= V
IL
or V
OE
= V
IH
or
V
WE
= V
IL
, V
I/O
= 0 to V
CC
V
OH1
= –2.0 mA
V
OH2
= –100 μA
V
OL1
= 2.0 mA
V
OL2
= –100 μA
V
CE1
= V
IL
, V
CE2
= V
IH
, I
I/O
= 0 mA, V
IN
= V
IH
or V
IL
V
CE1
= V
IL
, V
CE2
= V
IH
,
I
I/O
= 0 mA, V
IN
= V
IH
or V
IL
,
DUTY100%
V
CE2
≤
0.2 V or
(V
CE1
≥
V
CC
– 0.2 V,
V
CE2
≥
V
CC
– 0.2 V)
V
CE1
= V
IH
or V
CE2
= V
IL
, V
IN
= 0 to V
CC
–1.0
+1.0
μA
I/O leakage current
I
LO
–1.0
+1.0
μA
Outpu high-level voltage
V
OH1
V
OH2
V
OL1
V
OL2
I
CCA2
V
CC
– 0.4
V
CC
– 0.1
V
V
Outpu low-level voltage
0.4
V
0.1
V
Operating supply current
1.2
mA
(CMOS inputs)
min cycle
70 ns
100 ns
25
20
I
CCA3
mA
1 μs cycle
2
Standby mode supply current
Ta
≤
85°C
Ta
≤
70°C
Ta
≤
25°C
20
(V
CC
– 0.2 V/0.2 V inputs)
I
CCS1
10
μA
0.1
(CMOS inputs)
I
CCS2
0.4
mA
DC Electrical Characteristics
at Ta = –40 to +85°C, V
CC
= 2.7 to 3.6 V
Note: These parameters are not measured for all devices, but are sampled values.
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Input capacitance
C
IN
C
I/O
V
IN
= 0 V
V
I/O
= 0 V
6
10
pF
I/O capacitance
6
10
pF
I/O Capacitances
at Ta = 25°C, f = 1 MHz
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LC35W1000BTS-10U | Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
| LC35W1000BTS-70U | Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
| LC35W1000BM-10U | |
| LC35W1000BM-70U | |
| LC35W1000BTS | |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LC35W1000BM-10U | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述: |
| LC35W1000BM-70U | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述: |
| LC35W1000BTS | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述: |
| LC35W1000BTS-10U | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
| LC35W1000BTS-70U | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
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