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參數(shù)資料
| 型號： | LC35V1000BTS-70U |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
| 中文描述： | 異步硅門100萬（131072字× 8位）的SRAM |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 178K |
| 代理商： | LC35V1000BTS-70U |
AC Electrical Characteristics
at Ta = –40 to +85°C, V
CC
= 3.0 to 3.6 V
AC test conditions
Input pulse voltage levels: V
IL
= 0.2 V
CC
, V
IH
= 0.8 V
CC
Input rise and fall times: 5 ns
Input and output timing leves: 0.5 V
CC
Output load: 30 pF (including the jig capacitance)
No. 7056-5/9
LC35V1000BM, BTS-70U
Read cycle
Parameter
Symbol
min
max
Unit
Read cyle time
t
RC
t
AA
t
CA1
t
CA2
t
OA
t
OH
t
COE1
t
COE2
t
OCE
t
COD1
t
COD2
t
OOD
70
ns
Address access time
70
ns
CE1 access time
70
ns
CE2 access time
70
ns
OE access time
40
ns
Output hold time
10
ns
CE1 output enable time
5
ns
CE2 output enable time
5
ns
OE output enable time
0
ns
CE1 output disable time
35
ns
CE2 output disable time
35
ns
OE output disable time
30
ns
Write cycle
Parameter
Symbol
min
max
Unit
Write cyle time
t
WC
t
AS
tWP
70
ns
Address setup time
0
ns
Write pulse width
50
ns
CE1 setup time
t
CW1
t
CW2
t
WR
t
WR1
t
WR2
t
DS
t
DH
t
DH1
t
DH2
t
WOE
t
WOD
60
ns
CE2 setup time
60
ns
Write recovery time
0
ns
OE1 write recovery time
0
ns
CE2 write recovery time
0
ns
Data setup time
40
ns
Data hold time
0
ns
OE1 data hold time
0
ns
CE2 data hold time
0
ns
WE output enable time
5
ns
WE output disable time
35
ns
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| LC35V256ET-70W | 256K (32K words x 8 bits) SRAM Control pins: OE and CE |
| LC35V256EM | 256K (32K words x 8 bits) SRAM Control pins: OE and CE |
| LC35V256EM-70W | 256K (32K words x 8 bits) SRAM Control pins: OE and CE |
| LC35W1000BM | Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
| LC35W1000BTS-10U | Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LC35V256EM | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:256K (32K words x 8 bits) SRAM Control pins: OE and CE |
| LC35V256EM-70W | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:256K (32K words x 8 bits) SRAM Control pins: OE and CE |
| LC35V256ET | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| LC35V256ET-70W | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:256K (32K words x 8 bits) SRAM Control pins: OE and CE |
| LC35W1000BM | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
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