參數(shù)資料
型號(hào): LC321664AM
廠商: Sanyo Electric Co.,Ltd.
英文描述: 1 MEG (65536 words X 16 bits) DRAM Fast Page Mode, Byte Write
中文描述: 1邁可(65536字× 16位),內(nèi)存快速頁(yè)面模式,字節(jié)寫(xiě)
文件頁(yè)數(shù): 3/30頁(yè)
文件大?。?/td> 964K
代理商: LC321664AM
LC321664AJ, AM, AT-80
No. 4795-3/30
Block Diagram
Specifications
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Note
Maximum supply voltage
V
CC
max
V
IN
V
OUT
–1.0 to +7.0
V
1
Input voltage
–1.0 to +7.0
V
1
Output voltage
–1.0 to +7.0
V
1
Allowable power dissipation
LC321664AJ, AM
Pd max
800
mW
1
LC321664AT
700
Output short-circuit current
I
OUT
Topr
50
mA
1
Operating temperature range
0 to +70
°C
1
Storage temperature range
Tstg
–55 to +150
°C
1
Note: 1) Stresses greater than the above listed maximum values may result in damage to the device.
DC Recommended Operating Ranges
at Ta = 0 to +70°C
Parameter
Symbol
min
typ
max
Unit
Note
Power supply voltage
V
CC
V
IH
4.5
5.0
5.5
V
2
Input high level voltage
2.4
6.5
V
2
Input low level voltage (A0 to A7,
RAS, CAS, UW, LW, OE)
V
IL
–1.0
*
+0.8
V
2
Input low level voltage
(I/O1 to I/O16)
V
IL
–0.5
*
+0.8
V
2
Note: 2) All voltages are referenced to V
SS
.
A bypass capacitor of about 0.1 μF should be connected between V
CC
and V
SS
of the device.
*
–2.0 V when pulse width is less than 20 ns
相關(guān)PDF資料
PDF描述
LC321664BJ 1 MEG (65536 words X 16 bits) DRAM Fast Page Mode, Byte Write
LC321664BM 1 MEG (65536 words X 16 bits) DRAM Fast Page Mode, Byte Write
LC321664BT-80 1 MEG (65536 words X 16 bits) DRAM Fast Page Mode, Byte Write
LC321664AJ-80
LC321664BJ-70
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LC321664AM-80 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
LC321664AT 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
LC321664AT-80 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:1 MEG (65536 words X 16 bits) DRAM Fast Page Mode, Byte Write
LC321664BJ 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:1 MEG (65536 words X 16 bits) DRAM Fast Page Mode, Byte Write
LC321664BJ-70 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述: