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參數(shù)資料
| 型號： | LBC858CWT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | General Purpose Transistors PNP Silicon |
| 中文描述： | 通用硅晶體管進步黨 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 284K |
| 代理商： | LBC858CWT1 |
LESHAN RADIO COMPANY, LTD.
K6–3/6
LBC856AWT1, BWT1 LBC857AWT1, BWT1, LBC858AWT1, BWT1, CWT1
LBC857/LBC858
I
C
, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
I
C
, COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
–0.2
–0.5
–1.0
–2.0
–5.0
–10
–20
–50
–100
–200
V
CE
= –10 V
T
A
= 25°C
2.0
1.5
1.0
0.7
0.5
0.3
0.2
–0.1
–0.2
–0.5
–1.0
–2.0
–5.0
–10
–20
–50
–100
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
=10
V
BE(on)
@ V
CE
= –10 V
V
CE(sat)
@ I
C
/I
B
= 10
T
A
= 25°C
V
–1.0
–0.9
–0.8
–0.7
–0.6
–0.5
–0.4
–0.3
–0.2
–0.1
0
θ
V
1.0
1.2
1.6
2.0
2.4
2.8
I
B
, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
V
C
,
I
C
= –200 mA
–55°C to +125°C
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
–0.2
–1.0
–10
–100
–0.02
–0.1
–1.0
–10
–20
–2.0
–1.6
–1.2
–0.8
–0.4
0
I
C
=
–10 mA
I
C
= –100 mA
I
C
= –
20 mA
I
C
= –50 mA
h
F
,
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
I
C
, COLLECTOR CURRENT (mAdc)
Figure 6. Current–Gain – Bandwidth Product
T
A
=25°C
V
CE
= –10V
T
A
= 25°C
f
T
,
P
C
C
ob
C
ib
400
300
200
150
100
80
60
40
30
20
10.0
7.0
5.0
3.0
2.0
1.0
–0.4
–0.6
–1.0
–2.0
–4.0
–6.0
–10
–20
–30
–40
–0.5
–1.0
–2.0
–3.0
–5.0
–10
–20
–30
–50
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|---|---|
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