參數(shù)資料
型號: LBC857BDW1T1
廠商: 樂山無線電股份有限公司
英文描述: Dual General Purpose Transistors
中文描述: 雙通用晶體管
文件頁數(shù): 5/6頁
文件大?。?/td> 250K
代理商: LBC857BDW1T1
LESHAN RADIO COMPANY, LTD.
LBC856–5/6
L
BC856BDW1T1,
L
BC857BDW1T1,
L
BC857CDW1T1,
L
BC858BDW1T1,
L
BC858CDW1T1
Figure 13. Thermal Response
Figure 14. Active Region Safe Operating Area
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
-200
-1.0
I
T
A
= 25
°
C
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
3 ms
T
J
= 25
°
C
-100
-50
-10
-5.0
-2.0
-5.0
-10
-30
-45 -65
-100
1 s
BC558
BC557
BC556
The safe operating area curves indicate I
C
–V
CE
limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated
by the applicable curve.
The data of Figure 14 is based upon T
J(pk)
= 150
°
C; T
C
or T
A
is variable depending upon conditions. Pulse curves are valid
for duty cycles to 10% provided T
J(pk)
150
°
C. T
J(pk)
may be
calculated from the data in Figure 13. At high case or ambient
temperatures, thermal limitations will reduce the power that can
be handled to values less than the limitations imposed by the
secondary breakdown.
t, TIME (ms)
1.0
r
1.0
0
R
0.1
0.01
0.001
10
100
1.0k
10k
100k
D = 0.5
0.2
0.1
0.05
SINGLE PULSE
Z
θ
JA
(t) = r(t) R
θ
JA
R
θ
JA
= 328
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
R
θ
JC
(t)
t
1
t
2
P
(pk)
DUTY CYCLE, D = t
1
/t
2
1.0M
0.02
0.01
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