參數(shù)資料
型號: LBC857BDW1T1
廠商: 樂山無線電股份有限公司
英文描述: Dual General Purpose Transistors
中文描述: 雙通用晶體管
文件頁數(shù): 3/6頁
文件大?。?/td> 250K
代理商: LBC857BDW1T1
LESHAN RADIO COMPANY, LTD.
LBC856 –3/6
L
BC856BDW1T1,
L
BC857BDW1T1,
L
BC857CDW1T1,
L
BC858BDW1T1,
L
BC858CDW1T1
TYPICAL CHARACTERISTICS –
L
BC856
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT (AMP)
Figure 2. “On” Voltage
I
C
, COLLECTOR CURRENT (mA)
-0.8
-1.0
-0.6
-0.2
-0.4
1.0
2.0
-0.1
-1.0
-10
-200
-0.2
0.2
0.5
-0.2
-1.0
-10
-200
T
J
= 25
°
C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= -5.0 V
Figure 3. Collector Saturation Region
I
B
, BASE CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
I
C
, COLLECTOR CURRENT (mA)
-1.0
-1.2
-1.6
-2.0
-0.02
-1.0
-10
0
-20
-0.1
-0.4
-0.8
V
V
θ
°
-0.2
-2.0
-10
-200
-1.0
T
J
= 25
°
C
I
C
=
-10 mA
h
V
V
CE
= -5.0 V
T
A
= 25
°
C
0
-0.5
-2.0
-5.0
-20
-50
-100
-0.05
-0.2
-0.5
-2.0
-5.0
-100 mA
-20 mA
-1.4
-1.8
-2.2
-2.6
-3.0
-0.5
-5.0
-20
-50
-100
-55
°
C to 125
°
C
θ
VB
for V
BE
-2.0 -5.0
-20
-50 -100
Figure 5. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
40
Figure 6. Current–Gain – Bandwidth Product
I
C
, COLLECTOR CURRENT (mA)
-0.1 -0.2
-1.0
-50
2.0
-2.0
-10
-100
100
200
500
50
20
20
10
8.0
6.0
4.0
-1.0
-10
-100
V
CE
= -5.0 V
C
f
T
-0.5
-5.0
-20
T
J
= 25
°
C
C
ob
C
ib
-50 mA
-200 mA
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