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參數(shù)資料
| 型號： | LBC848BDW1T1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Dual General Purpose Transistors NPN Duals |
| 中文描述： | 雙通用晶體管npn型偶 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 174K |
| 代理商： | LBC848BDW1T1 |
LESHAN RADIO COMPANY, LTD.
LBC846b–3/5
LBC846BDW1T1, LBC847BDW1T1, LBC847CDW1T1, LBC848BDW1T1, LBC848CDW1T1
TYPICAL CHARACTERISTICS
I
C
, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
I
C
, COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
0.1
0.2 0.3
0.50.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70100
2.0
1.5
1.0
0.8
0.6
0.4
0.3
0.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
h
V
I
B
, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
0.02
0.1
1.0
10
20
2.0
1.6
1.2
0.8
0.4
0
θ
v
,
1.0
1.2
1.6
2.0
2.4
2.8
0.2
1.0
10
100
V
C
,
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LBC848CDW1T1 | Dual General Purpose Transistors NPN Duals |
| LBC846BPDW1T1 | Dual General Purpose Transistors NPN/PNP Duals (Complimentary) |
| LBC847BPDW1T1 | Dual General Purpose Transistors NPN/PNP Duals (Complimentary) |
| LBC847CPDW1T1 | Dual General Purpose Transistors NPN/PNP Duals (Complimentary) |
| LBC848BPDW1T1 | Dual General Purpose Transistors NPN/PNP Duals (Complimentary) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LBC848BDW1T1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Dual General Purpose Transistors NPN Duals |
| LBC848BDW1T3G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Dual General Purpose Transistors NPN Duals |
| LBC848BLT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon |
| LBC848BLT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon |
| LBC848BPDW1T1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Dual General Purpose Transistors NPN/PNP Duals (Complimentary) |
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