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參數(shù)資料
| 型號： | LBC847AWT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | General Purpose Transistors NPN Silicon |
| 中文描述： | 通用晶體管NPN硅 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 160K |
| 代理商： | LBC847AWT1 |
LESHAN RADIO COMPANY, LTD.
K5–2/5
LBC846AWT1,BWT1 LBC847AWT1,BWT1 CWT1 LBC848AWT1,BWT1,CWT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10
μ
A, V
CE
= 5.0 V)
h
FE
—
—
—
110
200
90
150
270
180
290
520
—
—
0.7
0.9
660
—
—
—
—
220
450
800
0.25
0.6
—
—
700
770
—
(I
C
= 2.0 mA, V
CE
= 5.0 V)
420
Collector–Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
Collector–Emitter Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA)
Base–Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
Base–Emitter Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA)
Base–Emitter Voltage (I
C
= 2.0 mA, V
CE
= 5.0 V)
Base–Emitter Voltage
(I
C
= 10 mA, V
CE
= 5.0 V)
V
CE(sat)
—
—
—
—
580
—
V
V
BE(sat)
V
V
BE(on)
mV
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
C
= 10 mA, V
CE
= 5.0 Vdc, f = 100 MHz)
Output Capacitance (V
CB
= 10 V, f = 1.0 MHz)
Noise Figure (I
C
= 0.2 mA, NF
V
CE
= 5.0 V
dc
, R
S
= 2.0 k
, —
f = 1.0 kHz, BW = 200 Hz) —
f
T
100
—
—
MHz
C
obo
—
—
4.5
pF
dB
—
—
10
4.0
I
C
, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
I
C
, COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
V
CE
= 10 V
T
A
= 25°C
2.0
1.5
1.0
0.8
0.6
0.4
0.3
0.2
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
=10
V
BE(on)
@ V
CE
= 10 V
V
CE(sat)
@ I
C
/I
B
= 10
T
A
= 25°C
V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
θ
V
1.0
1.2
1.6
2.0
2.4
2.8
I
B
, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
V
C
,
I
C
= 200 mA
–55°C to +125°C
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
2.0
1.6
1.2
0.8
0.4
0
I
C
=
10 mA
I
C
= 100 mA
I
C
=
20 mA
I
C
= 50 mA
h
F
,
0.2
1.0
10
100
0.02
0.1
1.0
10
20
LBC846A, LBC847A, LBC848A
LBC846B, LBC847B, LBC848B
LBC847C, LBC848C
LBC846A, LBC847A, LBC848A
LBC846B, LBC847B, LBC848B
LBC846A, LBC847A,L BC848A
LBC846B, LBC847B,L BC848B
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| LBC848AWT1 | General Purpose Transistors NPN Silicon |
| LBC848BWT1 | General Purpose Transistors NPN Silicon |
| LBC848CWT1 | General Purpose Transistors NPN Silicon |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LBC847AWT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon |
| LBC847B | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon |
| LBC847BDW1T1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Dual General Purpose Transistors NPN Duals |
| LBC847BDW1T1G | 制造商: 功能描述:GENERAL PURPOSE TRANSISTORS |
| LBC847BLT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon |
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