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參數(shù)資料
| 型號(hào)： | LBC847BWT1 |
| 廠商： | 樂(lè)山無(wú)線電股份有限公司 |
| 英文描述： | General Purpose Transistors NPN Silicon |
| 中文描述： | 通用晶體管NPN硅 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 160K |
| 代理商： | LBC847BWT1 |
LESHAN RADIO COMPANY, LTD.
K5–1/5
1
3
2
MAXIMUM RATINGS
Rating
Symbol
BC846
BC847
BC848
Unit
Collector–Emitter Voltage
V
CEO
65
45
30
V
Collector–Base Voltage
V
CBO
80
50
30
V
Emitter–Base Voltage
V
EBO
6.0
6.0
5.0
V
Collector Current — Continuous
I
C
100
100
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Junction and Storage Temperature
Symbol
Max
Unit
P
D
150
mW
R
θ
JA
P
D
T
J
, T
stg
833
2.4
°C/W
mW/°C
°C
–55 to +150
DEVICE MARKING
LBC846AWT1 = 1A; LBC846BWT1 = 1B; LBC847AWT1 = 1E; LBC847BWT1 = 1F;
LBC847CWT1 = 1G; LBC848AWT1 = 1J; LBC848BWT1 = 1K; LBC848CWT1 = 1L
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 10 mA)
65
45
30
80
50
30
80
50
30
6.0
6.0
5.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
15
5.0
V
(BR)CEO
v
Collector–Emitter Breakdown Voltage
(I
C
= 10
μ
A, V
EB
= 0)
V
(BR)CES
v
Collector–Base Breakdown Voltage
(I
C
= 10
μ
A)
V
(BR)CBO
v
Emitter–Base Breakdown Voltage
(I
E
= 1.0
μ
A)
V
(BR)EBO
v
Collector Cutoff Current (V
CB
= 30 V)
I
CBO
nA
μ
A
(V
CB
= 30 V, T
A
= 150°C)
LBC846AWT1,BWT1
LBC847AWT1,BWT1
CWT1
LBC848AWT1,BWT1
CWT1
2
EMITTER
3
COLLECTOR
1
BASE
SOT–323 /SC–70
1.FR–5=1.0 x 0.75 x 0.062in
LBC847 Series
LBC848 Series
LBC846 Series
LBC846 Series
LBC847 Series
LBC848 Series
LBC846 Series
LBC847 Series
LBC848 Series
LBC846 Series
LBC847 Series
LBC848 Series
Pb–
Pb–
Device
ORDERING INFORMATION
Package
Shipping
LBC846AWT1G,BWT1G
LBC847AWT1G,BWT1G,CWT1G
LBC848AWT1G,BWT1G,CWT1G
SOT-323
SOT-323
SOT-323
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
General Purpose Transistors
NPN Silicon
Pb–
(
)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LBC847CWT1 | General Purpose Transistors NPN Silicon |
| LBC848AWT1 | General Purpose Transistors NPN Silicon |
| LBC848BWT1 | General Purpose Transistors NPN Silicon |
| LBC848CWT1 | General Purpose Transistors NPN Silicon |
| LBC846BDW1T1 | Dual General Purpose Transistors NPN Duals |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LBC847BWT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon |
| LBC847C | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon |
| LBC847CDW1T1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Dual General Purpose Transistors NPN Duals |
| LBC847CDW1T1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Dual General Purpose Transistors NPN Duals |
| LBC847CLT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon |
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