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參數(shù)資料
| 型號： | LBC817-25LT1G |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | General Purpose Transistors NPN Silicon |
| 中文描述： | 通用晶體管NPN硅 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 63K |
| 代理商： | LBC817-25LT1G |
LESHAN RADIO COMPANY, LTD.
LBC817_S-2/3
LBC817 Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= –10 mA)
V
(BR)CEO
45
—
—
V
Collector–Emitter Breakdown Voltage
(V
EB
= 0, I
C
= –10
μ
A)
V
(BR)CES
50
—
—
V
Emitter–Base Breakdown Voltage
( I
E
= –1.0
μ
A)
V
(BR)EBO
5.0
—
—
V
Collector Cutoff Current
I
CBO
( V
CB
= 20 V)
—
—
100
nA
( V
CB
= 20 V, T
A
= 150°C)
—
—
5.0
μ
A
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I
C
= 100 mA, V
CE
= 1.0 V)
h
FE
LBC817–16
LBC817–25
LBC817–40
100
160
250
40
—
—
—
—
250
400
600
—
(I
C
= 500 mA, V
CE
= 1.0 V)
Collector–Emitter Saturation Voltage
(I
C
= 500 mA, I
B
= 50 mA)
V
CE(sat)
—
—
0.7
V
Base–Emitter On Voltage
V
BE(on)
—
—
1.2
V
( I
C
= 500 mA, V
CE
= 1.0 V)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
( I
C
= 10 mA, V
CE
= 5.0 V
dc
, f = 100 MHz)
f
T
100
—
—
MHz
Output Capacitance
(V
CB
= 10 V, f = 1.0 MHz)
C
obo
—
10
—
pF
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| LBC817-25WT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors RoHS requirements. |
| LBC817-25WT3G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors RoHS requirements. |
| LBC817-40DPMT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Dual General Purpose Transistors NPN/PNP Duals |
| LBC817-40LT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon |
| LBC817-40LT1G | 制造商: 功能描述:PNP TRANSISTOR DIODE (LRC) |
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