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參數(shù)資料
| 型號(hào)： | L9925 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | DMOS DUAL FULL BRIDGE DRIVER |
| 中文描述： | 偶的DMOS全橋驅(qū)動(dòng)器 |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 81K |
| 代理商： | L9925 |
In this conditionthe dissipated power is ginen by:
P
ON
= R
DS(ON)
I
DS2
The low R
DS(ON)
of the Multipower BCD process
can provide high currents with low power dissipa-
tion.
OFF STATE
When one of the POWER DMOS transistor is
OFF the V
DS
voltage is equal to the supply volt-
age andonly the leakage currentI
DSS
flows.
The power dissipation during this period is given
by:
P
OFF
= V
S
I
DSS
Figure 5a.
Two phasechopping
TRANSITIONS
Like all MOS power transistors the DMOS
POWER transistors have an intrinsic diode be-
tween their source and drain that can operate as
a fast freewheelingdiode in switched mode appli-
cations. During recirculation with the ENABLE in-
put is low, the POWER MOS is OFF and the di-
ode voltage it is clamped to its characteristics.
When the ENABLE input is low, the POWER
MOS is OFF and the diode carries all of the recir-
culationcurrent. The power dissipated in the tran-
sitional times in the cycle depends upon the volt-
age and currentwaveforms in theapplication.
P
trans
= I
DS
(t)
V
DS
(t)
Figure 5b.
One phase chopping
Figure 5c.
Enablechopping
EN
IN1 =
H
IN2 =
L
EN1 = H
IN1
IN2
D99AT429
EN
IN1 =
L
IN2 =
H
EN1 = H
IN1
IN2
D99AT430
EN
IN1 =
H
IN2 =
L
EN1 = H
IN1
IN2
D99AT431
EN
IN1 =
H
H
IN2 =
IN1
IN2
D99AT432
EN
IN1 =
H
IN2 =
L
EN1 = H
IN1
IN2
D99AT433
EN
IN1 =
X
IN2 =
X
EN1 = L
IN1
IN2
D99AT434
L9925
6/9
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