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參數(shù)資料
| 型號： | L9925 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | DMOS DUAL FULL BRIDGE DRIVER |
| 中文描述： | 偶的DMOS全橋驅(qū)動器 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 81K |
| 代理商： | L9925 |
ABSOLUTEMAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond whih damage to the device may occur. Functional
operation underthese conditionisn’t implied.
For voltages and currents appliedexternallyto the device:
Symbol
Parameter
Value
Unit
V
VSDC
Dc Supply Voltage
Supply Voltage Pulse (T
≤
400ms)
(1)
-0.3 to 26
V
V
VSP
40
V
I
OUT
DC Output Load Current
±
1.2
±
1.8
A
I
OUT MAX
DC Output Current:for VOUT > VVS +0.3V or VOUT < -0.3V
the internal DMOS reverse and/or substrate diode become
conductive and the applied current should not exceed the
specified limit.
A
V
IN1,2
DC Input Voltage
-0.3 to 7
V
V
EN
Enable Input Voltage
-0.3 to 7
V
T
stg
, T
j
-40 to 150
°
C
P
tot
Total Power Dissipation (T
pins
= 80
°
C)
(T
amb
= 70
°
C no copper area on PCB)
(T
amb
=70
°
C8cm
2
copper area on PCB)
5
1.23
2
W
W
W
(1) Device may be overstressed if pulsed simultaneous with short circuit at one or more of the outputs will be present.
THERMAL DATA
Symbol
Parameter
Value
Unit
T
jTS
Thermal Shut-down junction temperature min.
150
°
C
°
C
T
jTSH
Thermal Shut-down thereshold hysteresis typ.
Thermal Resistance Junction-ambient
(2)
25
R
th j-amb
50
°
C/W
°
C/W
R
thj-pins
Thermal Resistance Junction-pins
15
(2)
With 6cm
2
on board heatsink area
PGND
IN1
EN1
N.C.
N.C.
GND
OUT1
GND
OUT3
VS2
GND
GND
N.C.
VS1
N.C.
OUT2
IN2
N.C.
1
3
2
4
5
6
7
8
9
26
25
24
23
22
20
21
19
27
10
28
N.C.
N.C.
D88AT424
N.C.
EN2
IN3
IN4
OUT4
N.C.
11
12
13
18
16
17
15
14
PGND
N.C.
PIN CONNECTION
L9925
2/9
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