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參數(shù)資料
| 型號(hào)： | L9013LT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | General Purpose Transistors NPN Silicon |
| 中文描述： | 通用晶體管NPN硅 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 123K |
| 代理商： | L9013LT1 |
General Purpose Transistors
NPN Silicon
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
V
CEO
20
V
Collector-Base Voltage
V
CBO
40
V
Emitter-Base Voltage
V
EBO
5
V
Collector current-continuoun
THERMAL CHARATEERISTICS
I
C
500
mAdc
Symbol
P
D
Max
Unit
Total Device Dissipation FR-5 Board, (1)
T
A
=25
o
C
Derate above 25
o
C
225
mW
1.8
556
mW/
o
C
Thermal Resistance, Junction to Ambient
R
θ
JA
o
C
/
W
P
D
300
mW
2.4
417
mW/
o
C
Thermal Resistance, Junction to Ambient
R
θ
JA
Tj ,Tstg
o
C
/
W
Junction and Storage Temperature
DEVICE MARKING
-55 to +150
o
C
L9013QLT1=13Q
ELECTRICAL CHARACTERISTICS (T
A
=25
o
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(I
C
=1.0mA)
Emitter-Base Breakdown Voltage
(I
E
=100
μ
A)
Collector-Base Breakdown Voltage
(I
C
=100
μ
A)
Collector Cutoff Current (V
CB
=35V)
V
(BR)CEO
20
-
-
V
V
(BR)EBO
5
-
-
V
V
(BR)CBO
40
-
-
V
I
CBO
-
-
150
nA
Emitter Cutoff Current (V
EB
=4V)
I
EBO
150
nA
Total Device Dissipation
Derate above 25
o
C
Rating
Alumina Substrate, (2) T
A
=25
o
C
Characteristic
1
3
2
L901
3
*LT1
SOT-23 (TO-236AB)
LESHAN RADIO COMPANY, LTD.
2
EMITTER
3
COLLECTOR
1
BASE
L
901
3
*LT1
–1/2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| L9013PLT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon |
| L9013PLT3G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon |
| L9013QLT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon |
| L9013QLT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon |
| L9013QLT3G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon |
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