參數(shù)資料
型號(hào): L7833S
廠商: International Rectifier
英文描述: HEXFETPower MOSFET
中文描述: HEXFETPower MOSFET的
文件頁數(shù): 5/12頁
文件大?。?/td> 268K
代理商: L7833S
www.irf.com
5
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Threshold Voltage Vs. Temperature
25
50
75
100
125
150
175
0
40
80
120
160
I
D
LIMITED BY PACKAGE
-75
-50
-25
0
25
50
75
100 125 150 175
TJ , Temperature ( °C )
0.0
0.5
1.0
1.5
2.0
2.5
VG
ID = 250μA
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D =
t / t
2. Peak T
= P
x Z
+ T
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
T
(
t
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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