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參數(shù)資料
| 型號： | L7833S |
| 廠商： | International Rectifier |
| 英文描述： | HEXFETPower MOSFET |
| 中文描述： | HEXFETPower MOSFET的 |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 268K |
| 代理商： | L7833S |
4
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Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
C
100000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VSD, Source-to-Drain Voltage (V)
0.10
1.00
10.00
100.00
1000.00
IS
TJ = 25°C
TJ = 175°C
VGS = 0V
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μsec
0
5
10
15
20
25
30
35
40
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
VG
VDS= 24V
VDS= 15V
ID= 30A
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