參數(shù)資料
型號(hào)： L652DU12RK
廠商： Advanced Micro Devices, Inc.
英文描述： 128 Megabit (16 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO⑩ Control
中文描述： 128兆位（16米× 8位）的CMOS 3.0伏特，只有統(tǒng)一部門閃存與VersatileIO⑩控制記憶
文件頁(yè)數(shù)： 54/54頁(yè)
文件大?。?/td> 492K
代理商： L652DU12RK
52
Am29LV652D
24961A5 May 5, 2006
D A T A S H E E T
REVISION SUMMARY
Revision A (May 24, 2001)
Initial release.
Revision A+1 (July 31, 2001)
AC Characteristics—Alternate CE# Controlled
Erase and Program Table
t
WHWH1
—Byte Programming Operation:
Changed typi-
cal value from 11 μs to 5 μs.
t
WHWH1
—Accelerated Byte Programming Operation:
Changed typical value from 7 μs to 4 μs.
Revision A+2 (August 14, 2001)
Global
Removed the speed options for 100 ns with V
IO
= 1.8
V – 2.9 V and 120 ns with V
IO
= 1.8 V – 2.9 V.
Changed the speed option for 120 ns with V
IO
= 3.0 V
– 5.0 V from 120R to 12R.
General Description and Device Bus Operations
Added “For voltage levels below 3 V, contact an AMD
representative for more information.” to VersatileI/O
text.
Ordering Information
Removed the Optional Processing from the order
number.
Revision A+3 (January 10, 2002)
Global
Clarified description of VersatileIO (V
IO
) in the follow-
ing sections: Distinctive Characteristics; General De-
scription; VersatileIO (V
IO
) Control; Operating Ranges;
DC Characteristics; CMOS compatible.
Revision A+4 (October 29, 2004)
Global
Added Spansion Cover Sheet
Added reference links to page numbers
Added Colophon
Ordering Information
Added two package types to temperature range.
Valid Combination for FBGA Packages
Added MAF and MAK to order number.
Added F and K to Package Marking.
Revision A5 (May 5, 2006)
Added migration/obsolescence notices.
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without limita-
tion, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as con-
templated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the
public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,
aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for
any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion LLC will not be liable
to you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor
devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design
measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating
conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign
Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the prior au-
thorization by the respective government entity will be required for export of those product.
Trademarks
Copyright 2000–2006 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies
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L652DU90RF 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:128 Megabit (16 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO⑩ Control
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