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參數(shù)資料
| 型號： | L6382D5TR |
| 廠商： | 意法半導體 |
| 英文描述： | POWER MANAGEMENT UNIT FOR MICROCONTROLLED BALLAST |
| 中文描述： | 電源管理單元的微控鎮(zhèn)流器 |
| 文件頁數(shù)： | 10/14頁 |
| 文件大?。?/td> | 206K |
| 代理商： | L6382D5TR |
L6382D5
10/14
5
BLOCK DESCRIPTION
5.1 SUPPLY SECTION
■
PUVLO ( Power Under Voltage Lock Out):
This block controls the power management of the
L6382D5 ensuring the right current consumption in each operating state, the correct V
REF
current
capability, the driver enabling and the high-voltage start-up generator switching.
During Start-up the device sinks the current necessary to charge the external capacitor on pin V
CC
from
the high voltage bus; in this state the other IC's functions are disabled and the current consumption of
the whole IC is less than 150
μ
A.
When the voltage on V
CC
pin reaches VccON, the IC enters the save mode where the
μ
PUVLO block
controls Vcc between VccON and VccSM by switching ON/OFF the high voltage start-up generator.
■
HVSU (High-Voltage Start-Up generator):
a 600V internal MOS transistor structure controls the Vcc
supply voltage during START UP and SAVE MODE conditions and it reduces the power losses during
NORMAL MODE by switching OFF the MOS transistor. The transistor has a source current capability
of up to 30mA.
■
TPR (Two Point Regulator) & PWS:
during operatingmode, the TPR block controls the PSW switch
in order to regulate the IC supply voltage (VCC) to a value in the range between TPR(ON) and
TPR(OFF) by switching ON and OFF the PSW transistor.
– Vcc > TPRst: the PSW is switched ON immediately;
– TPR(ON) < Vcc < TPRst: the PSW is switched ON at the following falling edge of LGI;
– Vcc < TPR(OFF): the PSW is switched OFF at the following falling edge on LGI.
When the PSW switch is OFF, the diodes build a charge pump structure so that, connecting the TPR pin
to a switching voltage (through a capacitor) it is possible to supply the low voltage section of the chip with-
out adding any further external component. The diodes and the switch are designed to withstand a peak
current of at least 200mA
RMS
.
5.2 5V REFERENCE VOLTAGE
This block is used to supply the microcontroller; this source is able to supply 10mA in savemode and
30mA in normal mode; moreover, during start-up when V
REF
is not yet available, an additional circuit is
ensures that, even sinking 3mA, the pin voltage doesn't exceed 1.2V.
The reference is available until Vcc is above V
REF(OFF)
; below that it turns off and the additional sinking
circuit is enabled again.
5.3 DRIVERS
■
LSD (Low Side Driver): it consists of a level shifter from 5V logic signal (LGI) to Vcc MOS driving level;
conceived for the half-bridge low-side power MOS, it is able to source and sink 120mA (min).
■
HSD (Level Shifter and High Side Driver): it consists of a level shifter from 5V logic signal (HGI) to the
high side gate driver input up to 600V. Conceived for the half-bridge high-side power MOS, the HSD is
able to source 120mA from HSB to HSG (turn-on) and to sink 120mA to HSS (turn-off).
■
PFD (Power Factor Driver): it consists of a level shifter from 5V logic signal (PFI) to Vcc MOS driving
level: the driver is able to source 120mA from Vcc to PFG (turn-on) and to sink 250mA to GND (turn-
off); it is suitable to drive the MOS of the PFC pre-regulator stage.
■
HED (Heat Driver): it consists of a level shifter from 5V logic signal (HEI) to Vcc MOS driving level; the
driver is able to source 30mA from Vcc to HEG and to sink 75mA to GND and it is suitable for the
filament heating when they are supplied by independent winding.
■
Bootstrap Circuit it generates the supply voltage for the high side Driver (HSD). This circuit sources
current from Vcc to PIN HSB when LSG in ON. A patented integrated bootstrap section replaces an
相關PDF資料 |
PDF描述 |
|---|---|
| L6382D | Power management unit for microcontrolled ballast |
| L6382DTR | Power management unit for microcontrolled ballast |
| L6384 | High-Voltage Half Bridge Driver(高電壓半橋驅(qū)動器) |
| L6385 | High-Voltage High and Low Side Driver(高電壓高低邊驅(qū)動器) |
| L6386 | High-Voltage High and Low Side Driver(高電壓高低邊驅(qū)動器) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| L6382DTR | 功能描述:電池管理 Pwr management unit RoHS:否 制造商:Texas Instruments 電池類型:Li-Ion 輸出電壓:5 V 輸出電流:4.5 A 工作電源電壓:3.9 V to 17 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:VQFN-24 封裝:Reel |
| L6384 | 功能描述:功率驅(qū)動器IC Hi-Volt Half Bridge RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6384 | 制造商:STMicroelectronics 功能描述:600V HALF BRIDGE DRIVER 6384 DIP8 |
| L6384D | 功能描述:功率驅(qū)動器IC Hi-Volt Half Bridge RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6384D | 制造商:STMicroelectronics 功能描述:IC MOSFET DRIVER HALF BRIDGE ((NW)) |
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