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參數(shù)資料
| 型號(hào)： | L6382D5TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | POWER MANAGEMENT UNIT FOR MICROCONTROLLED BALLAST |
| 中文描述： | 電源管理單元的微控鎮(zhèn)流器 |
| 文件頁數(shù)： | 11/14頁 |
| 文件大?。?/td> | 206K |
| 代理商： | L6382D5TR |
11/14
L6382D5
external bootstrap diode. This section together with a bootstrap capacitor provides the bootstrap voltage
to drive the high side power MOSFET. This function is achieved using a high voltage DMOS driver
which is driven synchronously with the low side external power MOSFET. For a safe operation, current
flow between BOOT pin and Vcc is always inhibited, even though ZVS operation may not be ensured.
5.4 INTERNAL LOGIC, OVER CURRENT PROTECTION (OCP) AND INTERLOCKING FUNCTION.
The DIM (Digital Input Monitor) block manages the input signals delivered to the drivers ensuring that they
are low during the described start-up procedure; the DIM block controls the L6382D5 behaviour during
both save and operatingmodes.
When the voltage on pin CSI overcomes the internal reference of 0.54V (typ.) the block latches the fault
condition: in this state the OCP block forces low both HSD and LSD signals while CSO will be forced high.
This condition remains latched until LSI and HSI are simultaneously low and CSI is below 0.54V.
This function is suitable to implement an over current protection or hard-switching detection by using an
external sense resistor.
As the voltage on pin CSI can go negative, the current must be limited below 2mA by external compo-
nents.
Another feature of the DIM block is the
internal interlocking
that avoids cross-conduction in the half-
bridge FET's: if by chance both HGI and LGI input's are brought high at the same time, then LSG and HSG
are forced low as long as this critical condition persists.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| L6382D | Power management unit for microcontrolled ballast |
| L6382DTR | Power management unit for microcontrolled ballast |
| L6384 | High-Voltage Half Bridge Driver(高電壓半橋驅(qū)動(dòng)器) |
| L6385 | High-Voltage High and Low Side Driver(高電壓高低邊驅(qū)動(dòng)器) |
| L6386 | High-Voltage High and Low Side Driver(高電壓高低邊驅(qū)動(dòng)器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| L6382DTR | 功能描述:電池管理 Pwr management unit RoHS:否 制造商:Texas Instruments 電池類型:Li-Ion 輸出電壓:5 V 輸出電流:4.5 A 工作電源電壓:3.9 V to 17 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:VQFN-24 封裝:Reel |
| L6384 | 功能描述:功率驅(qū)動(dòng)器IC Hi-Volt Half Bridge RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6384 | 制造商:STMicroelectronics 功能描述:600V HALF BRIDGE DRIVER 6384 DIP8 |
| L6384D | 功能描述:功率驅(qū)動(dòng)器IC Hi-Volt Half Bridge RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6384D | 制造商:STMicroelectronics 功能描述:IC MOSFET DRIVER HALF BRIDGE ((NW)) |
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