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參數(shù)資料
| 型號： | L6122 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 100 V DMOS Switch(100 V DMOS開關(guān)) |
| 中文描述： | 100伏的DMOS開關(guān)（100伏的DMOS開關(guān)） |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 179K |
| 代理商： | L6122 |
SWITCHING TIMES RESISTIVE LOAD
Figure 1 :
TestCircuit.
ELECTRICAL CHARACTERISTICS
(T
j
= 25
o
C, V
CC
= 40V, unless otherwise specified)
Symbol
V
CC
I
CC
Parameter
Test Conditions
Min.
14
Typ.
Max.
48
Unit
V
mA
Supply Voltage
Supply Current
All V
IN
= H
V
EN
= Square Wave (200kHz, 50% DC)
V
EN
= L
I
D
= 1mA
V
EN
= L
V
EN
= L
V
DS
= 100V
V
DS
= 80V, T
j
= 125
°
C
V
CC
≥
14V, I
D
= 1.5A - V
EN
, V
IN
= H
9
I
Q
Quiescent Current
Drain Source Breakdown Voltage
2
3
mA
V
BV
DSS
100
I
DSS
Output Leakage Current
1
1
mA
R
DS(on)
(*)
V
INL
, V
ENL
V
INH
, V
ENH
I
INL
, I
ENL
I
INH
, I
ENH
t
d (on)
t
r
t
d (off)
t
f
V
SD
(*)
Static Drain-source on Resistance
Input Low Voltage
Input High Voltage
Input Low Current
Input High Current
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
Source Drain Diode Forward
Voltage
Source Drain Forward Voltage
0.7
V
V
μ
A
μ
A
ns
ns
ns
ns
V
- 0.3
2
0.8
7
- 100
10
V
IN
, V
EN
= L
V
IN
, V
EN
= H
I
= 1.5A
See Test Circuit and Waveforms
300
100
400
100
I
SD
= 1.5A, V
EN
= L
1.5
V
SD(on)
(*)
I
SD
= 1.5A - V
IN
, V
EN
= H
1.2
V
(*) Pulse test: pulse width =300
μ
s, duty cycle = 2 %.
L6122 - L6123
3/9
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