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參數(shù)資料
| 型號： | L6122 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 100 V DMOS Switch(100 V DMOS開關(guān)) |
| 中文描述： | 100伏的DMOS開關(guān)（100伏的DMOS開關(guān)） |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 179K |
| 代理商： | L6122 |
BLOCK DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
CC
I
D
Parameter
Value
100
60
1.5
3
5
8
1.5
3
5
8
7
7
– 1 to + 4
4.3
20
1.3
2.3
– 40 to + 150
Unit
V
V
A
A
A
A
A
A
A
A
V
V
V
W
W
W
W
°
C
Drain-source Voltage
Supply Voltage
Continuous Drain Current @ T
pins
= 90
°
C, POWERDIP
@ T
case
= 90
°
C, MULTIWATT
Pulsed Drain Current
POWERDIP
MULTIWATT
Continuous Source-drain
@ T
pins
= 90
°
C, POWERDIP
Diode Current
@ T
case
= 90
°
C, MULTIWATT
Pulsed Source Drain Diode Current
I
DM
(*)
I
SD
I
SDM
POWERDIP
MULTIWATT
V
IN
V
EN
V
S
P
tot
Input Voltage
Enable Voltage
Source Voltage
Total Power Dissipation
@ T
pins
= 90
°
C, POWERDIP
@ T
case
= 90
°
C, MULTIWATT
@ T
amb
= 70
°
C, POWERDIP
@ T
amb
= 70
°
C, MULTIWATT
T
stg
, T
j
Storage and Junction Temperature Range
(*) Pulse width
≤
300
μ
s, duty cycle
≤
10 %.
NOTE :
I
D
, I
DM
, I
SD
, I
SDM
aregiven per channel.
THERMAL DATA
Symbol
R
th j-pins
R
th j-case
R
th j-amb
Parameter
POWERDIP14+3+3
14
-
65
MULTIWATT15
-
3
35
Unit
o
C/W
o
C/W
o
C/W
Thermal Resistance Junction-pins
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Max.
L6122 - L6123
2/9
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