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參數(shù)資料
| 型號(hào)： | L5NK65Z |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 650V - 1.5ohm - 4.2A PowerFLAT⑩ Zener-Protected SuperMESH⑩Power MOSFET |
| 中文描述： | N溝道?650V - 1.5ohm - 4.2A的PowerFLAT⑩齊保護(hù)的SuperMESH⑩功率MOSFET |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大小： | 119K |
| 代理商： | L5NK65Z |
3/6
STL5NK65Z
ELECTRICAL CHARACTERISTICS
(TCASE
=25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 50μA
R
DS(on)
Static Drain-source On
Resistance
DYNAMIC
Symbol
g
fs
(1)
C
iss
C
oss
C
rss
SWITCHING
Symbol
t
d(on)
t
f
t
d(off)
t
f
Q
g
Q
gs
Q
gd
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
Note: 1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
Test Conditions
I
D
= 1 mA, V
GS
= 0
Min.
650
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
50
μA
μA
V
GS
= ± 20V
±10
μA
3
3.75
4.5
V
V
GS
= 10V, I
D
= 2.1 A
1.5
1.8
Parameter
Test Conditions
V
DS
= 10 V
,
I
D
= 2.1 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
5
Max.
Unit
S
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Gate Input Resistance
680
80
17
pF
pF
pF
C
oss eq.
(3)
V
GS
= 0V, V
DS
= 0V to 480 V
98
pF
R
G
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
4
Parameter
Test Conditions
V
DD
= 325 V, I
D
= 2.1 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
Min.
Typ.
20
15
140
40
Max.
Unit
ns
ns
ns
ns
Turn-on Delay Time
Fall Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 520V, I
D
= 4.2 A,
V
GS
= 10V
25
4.4
13.7
35
nC
nC
nC
Parameter
Test Conditions
Min.
Typ.
Max.
0.76
3
Unit
A
A
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
I
SD
= 0.76 A, V
GS
= 0
I
SD
= 4.2 A, di/dt = 100A/μs
V
DD
= 100V, T
j
= 150°C
(see test circuit, Figure 5)
1.6
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
375
1.76
10
ns
μC
A
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