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參數(shù)資料
| 型號(hào)： | L5NK65Z |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 650V - 1.5ohm - 4.2A PowerFLAT⑩ Zener-Protected SuperMESH⑩Power MOSFET |
| 中文描述： | N溝道?650V - 1.5ohm - 4.2A的PowerFLAT⑩齊保護(hù)的SuperMESH⑩功率MOSFET |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 119K |
| 代理商： | L5NK65Z |
STL5NK65Z
2/6
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
(2)
Drain Current (continuous) at T
C
= 25°C (Steady State)
Drain Current (continuous) at T
C
= 100°C
I
DM
(2)
Drain Current (pulsed)
P
TOT
(2)
Total Dissipation at T
C
= 25°C (Steady State)
P
TOT
(1)
Total Dissipation at T
C
= 25°C (Steady State)
Derating Factor (2)
dv/dt (4)
Peak Diode Recovery voltage slope
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
THERMAL DATA
Symbol
Rthj-F
Rthj-amb (2)
Note: 1. The value is rated according to R
thj-F
.
2. When Mounted on FR-4 Board of 1inch
2
, 2 oz Cu
3. Pulse width limited by safe operating area
4. I
SD
<4.2A, di/dt<300A/
μs, V
DD
<V
(BR)DSS
, T
J
<T
JMAX
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost-
effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.
Parameter
Value
Unit
650
V
650
V
± 30
V
0.76
0.48
A
A
3
A
2.5
W
75
W
0.02
4.5
W/°C
V/ns
–55 to 150
°C
Parameter
Max.
1.67
50
Unit
°C/W
°C/W
Thermal Resistance Junction-Foot (Drain)
Thermal Resistance Junction-ambient
Parameter
Max Value
4.2
Unit
A
190
mJ
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
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