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參數(shù)資料
| 型號(hào)： | L4601DW1T1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Silicon NPN Epitaxial Planer Transistor(Tr1), Silicon PNP Epitaxial Planer Transistor(Tr2) |
| 中文描述： | npn型硅外延刨床晶體管（TR1）的，硅外延刨床晶體管進(jìn)步黨（tr2）的 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 162K |
| 代理商： | L4601DW1T1 |
Tr1
ELECTRICAL CHARACTERISTICS (T
A
=25
o
C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
V(BR)CEO
50
-
-
V
(IC=1mA)
Emitter-Base Breakdown Voltage
V(BR)EBO
6
-
-
V
(IE=50
A)
Collector-Base Breakdown Voltage
V(BR)CBO
60
-
-
V
(IC=50
A)
Collector Cutoff Current
(VCB=60V)
ICBO
-
-
0.1
A
EMITTER CUTOFF CURRENT
IEBO
-
-
0.1
A
VEB=7V
ON CHARACTERISTICS
DC Current Gain
Hfe
120
-
560
(IC=1mA, VCE=6.0V)
Collector-Emitter Saturation Voltage
(IC=50mA,IB=5mA)
SMALL-SIGNAL CHARACTERISTICS
VCE(SAT)
-
-
0.4
V
Current-Gain-Bandwidth Product
Ft
-
180
-
MHz
(VCE = 12.0V; IE =-2.0 mA,f=100MHZ)
Output Capacitance(VCE=12V,f=1.0MHz)
Cobo
-
2
3.5
Pf
Tr2
ELECTRICAL CHARACTERISTICS (T
A
=25
o
C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC=-1mA)
Emitter-Base Breakdown Voltage
(IE=-50
A)
Collector-Base Breakdown Voltage
(IC=-50
A)
Collector Cutoff Current
(VCB=-60V)
V(BR)CEO
-50
-
-
V
V(BR)EBO
-6
-
-
V
V(BR)CBO
-60
-
-
V
ICBO
-
-
-0.1
A
Emitter Cutoff Current (VBE=-6V)
IEBO
-0.1
A
Characteristic
Characteristic
LESHAN RADIO COMPANY, LTD.
L4601DW1T
1
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2
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3
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