參數(shù)資料
型號(hào): L320ML90NF
廠商: Advanced Micro Devices, Inc.
英文描述: 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
中文描述: 32兆位(2米× 16位/ 4米× 8位)的MirrorBit⑩3.0伏特,只有統(tǒng)一閃存部門(mén)與VersatileI /輸出⑩控制
文件頁(yè)數(shù): 24/59頁(yè)
文件大?。?/td> 657K
代理商: L320ML90NF
22
Am29LV320MH/L
26517B4 January31,2007
D A T A S H E E T
Table 8.
Device Geometry Definition
Addresses
(x16)
Addresses
(x8)
Data
Description
27h
4Eh
0016h
Device Size = 2
N
byte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0005h
0000h
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
2Ch
58h
0001h
Number of Erase Block Regions within device (01h = uniform device, 02h = boot
device)
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
003Fh
0000h
0000h
0001h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
62h
64h
66h
68h
0000h
0000h
0000h
0000h
Erase Block Region 2 Information (refer to CFI publication 100)
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information (refer to CFI publication 100)
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Erase Block Region 4 Information (refer to CFI publication 100)
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