參數(shù)資料
型號: l209
廠商: IXYS Corporation
英文描述: High Voltage IGBT
中文描述: 高壓IGBT
文件頁數(shù): 4/4頁
文件大?。?/td> 73K
代理商: L209
2000 IXYS All rights reserved
4 - 4
Fig. 5
Typ. turn on energy and switching
times versus collector current
Fig. 6
Typ. turn off energy and switching
times versus collector current
Fig. 7
Typ. turn on energy and switching
times versus gate resistor
Fig.8
Typ. turn off energy and switching
times versus gate resistor
Fig. 9
Reverse biased safe operating area
RBSOA
Fig. 10 Typ. transient thermal impedance
0
50
100
150
0
10
20
30
40
0
40
80
120
160
0
50
100
150
0
5
10
15
20
0
200
400
600
800
0.00001
0.0001
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
0
8
16
24
32
40
48
56
0
5
10
15
20
25
mJ
0
400
800
1200
1600
2000
ns
0
8
16
24
32
40
48
56
0
5
10
15
20
25
mJ
0
40
80
120
160
200
ns
single pulse
V
CE
= 600V
V
GE
= ±15V
R
G
= 15
W
T
J
= 125
°
C
IXDN75N120
V
CE
= 600V
V
GE
= ±15V
I
C
= 75A
T
J
= 125
°
C
0
200
400
600
800
1000 1200
V
CE
0
50
100
150
200
R
G
= 15
W
T
J
= 125
°
C
V
CEK
< V
CES
V
CE
= 600V
V
GE
= ±15V
R
G
= 15
W
T
J
= 125
°
C
E
on
V
CE
= 600V
V
GE
= ±15V
I
C
= 75A
T
J
= 125
°
C
t
d(on)
t
r
E
off
t
d(off)
t
f
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
I
C
A
I
C
A
mJ
E
off
mJ
E
on
ns
t
ns
t
R
G
W
R
G
W
t
s
E
on
E
off
t
t
I
CM
K/W
Z
thJC
V
A
IXDN 75N120
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