參數(shù)資料
型號(hào)： l209
廠商： IXYS Corporation
英文描述： High Voltage IGBT
中文描述： 高壓IGBT
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 73K
代理商： L209
2000 IXYS All rights reserved
1 - 4
Symbol
Conditions
Maximum Ratings
V
CES
V
CGR
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 20 k
1200
1200
V
V
V
GES
V
GEM
Continuous
Transient
±20
±30
V
V
I
C25
I
C90
I
CM
T
C
= 25°C
T
C
= 90°C
T
C
= 90°C, t
p
= 1 ms
150
95
190
A
A
A
RBSOA
V
= ±15 V, T
= 125°C, R
= 15
Clamped inductive load, L = 30 μH
I
CM
= 150
V
CEK
< V
CES
A
t
(SCSOA)
V
GE
= ±15 V, V
= V
, T
J
= 125°C
R
G
= 15 , non repetitive
10
μs
P
C
T
C
= 25°C
IGBT
660
W
V
ISOL
50/60 Hz; I
ISOL
1 mA
2500
V~
T
J
T
stg
-40 ... +150
-40 ... +150
°C
°C
M
d
Mounting torque
Terminal connection torque (M4)
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
30
g
V
CES
I
C25
V
CE(sat) typ
= 2.2 V
= 1200 V
= 150 A
Features
G
NPT IGBT technology
G
low saturation voltage
G
low switching losses
G
square RBSOA, no latch up
G
high short circuit capability
G
positive temperature coefficient for
easy paralleling
G
MOS input, voltage controlled
G
International standard package
miniBLOC
Advantages
G
Space savings
G
Easy to mount with 2 screws
G
High power density
Typical Applications
G
AC motor speed control
G
DC servo and robot drives
G
DC choppers
G
Uninteruptible power supplies (UPS)
G
Switch-mode and resonant-mode
power supplies
High Voltage IGBT
Short Circuit SOA Capability
Square RBSOA
IXDN 75N120
Symbol
Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ.
max.
V
(BR)CES
V
GE
= 0 V
1200
V
V
GE(th)
I
C
= 3 mA, V
CE
= V
GE
4.5
6.5
V
I
CES
V
CE
= V
CES
T
J
= 25°C
T
J
= 125°C
4 mA
mA
6
I
GES
V
CE
= 0 V, V
GE
= ±
20 V
± 500
nA
V
CE(sat)
I
C
= 75 A, V
GE
= 15 V
2.2
2.7
V
G
E
C
E
E = Emitter
x
,
G = Gate,
C = Collector
E = Emitter
x
x
Either Emitter terminal can be used as
Main or Kelvin Emitter
miniBLOC, SOT-227 B
E153432
G
E
E
C
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