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參數(shù)資料
| 型號(hào)： | KTD1824E |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR NPN TRANSISTOR (FOR LOW-FREQUENCY AMPLIFICATION) |
| 中文描述： | 外延平面NPN晶體管（低頻功放） |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 71K |
| 代理商： | KTD1824E |
2001. 10. 23
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTD1824E
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
FOR LOW-FREQUENCY AMPLIFICATION.
FEATURES
High foward current transfer ratio h
FE
.
Low collector to emitter saturation voltage V
CE(sat)
.
High emitter to base voltage V
EBO
.
Low noise voltage NV.
ESM type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
MAXIMUM RATINGS (Ta=25
)
DIM
A
B
MILLIMETERS
1.60 0.10
0.85+
+
D
E
G
H
J
ESM
0.70 0.10
0.27+0.10/-0.05
1.60 0.10
1.00 0.10
0.50
0.13 0.05
+
C
1
3
2
E
B
D
A
G
H
C
J
1. EMITTER
2. BASE
3. COLLECTOR
+
+
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=20V, I
E
=0
-
-
100
nA
I
CEO
V
CE
=20V, I
B
=0
-
-
1
A
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=10
A, I
E
=0
50
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=1mA, I
B
=0
40
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=10
A, I
C
=0
15
V
DC Current Gain
h
FE
(Note)
V
CE
=10V, I
C
=2mA
400
1000
2000
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=10mA, I
B
=1mA
-
0.05
0.2
V
Transition Frequency
f
T
V
CB
=10V, I
E
=-2mA, f=200MHz
-
120
-
MHz
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
15
V
Collector Current
DC
I
C
50
mA
Pulse
I
CP
100
Collector Power Dissipation
P
C
100
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
h Rank
Type Name
Marking
L
Note : h
FE
Classification A:400~800, B:600~1200, C:1000~2000
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