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參數(shù)資料
| 型號： | KTD1824 |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR NPN TRANSISTOR (FOR LOW-FREQUENCY AMPLIFICATION) |
| 中文描述： | 外延平面NPN晶體管（低頻功放） |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 72K |
| 代理商： | KTD1824 |
2001. 11. 29
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTD1824
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
FOR LOW-FREQUENCY AMPLIFICATION.
FEATURES
High foward current transfer ratio h
FE
.
Low collector to emitter saturation voltage V
CE(sat)
.
High emitter to base voltage V
EBO
.
Low noise voltage NV.
USM type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
MAXIMUM RATINGS (Ta=25
)
DIM
A
MILLIMETERS
2.00 0.20
1.25 0.15
0.90+
0.3+0.10/-0.05
2.10 0.20
0.65
0.15+0.1/-0.06
1.30
0.00-0.10
0.70
0.42+
0.10 MIN
B
C
D
E
G
H
J
K
L
M
N
1. EMITTER
2. BASE
3. COLLECTOR
USM
K
1
3
2
E
B
D
A
J
G
C
L
H
M
M
N
N
+
+
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=20V, I
E
=0
-
-
100
nA
I
CEO
V
CE
=20V, I
B
=0
-
-
1
A
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=10
A, I
E
=0
50
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=1mA, I
B
=0
40
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=10
A, I
C
=0
15
V
DC Current Gain
h
FE
(Note)
V
CE
=10V, I
C
=2mA
400
1000
2000
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=10mA, I
B
=1mA
-
0.05
0.2
V
Transition Frequency
f
T
V
CB
=10V, I
E
=-2mA, f=200MHz
-
120
-
MHz
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
15
V
Collector Current
DC
I
C
50
mA
Pulse
I
CP
100
Collector Power Dissipation
P
C
100
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
h Rank
Type Name
Marking
L
Note : h
FE
Classification A:400~800, B:600~1200, C:1000~2000
相關PDF資料 |
PDF描述 |
|---|---|
| KTD1854T | EPITAXIAL PLANAR NPN TRANSISTOR |
| KTD1863 | EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE) |
| KTD1882 | EPITAXIAL PLANAR NPN TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING) |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| KTD1824_08 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:USM PACKAGE |
| KTD1824E | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR (FOR LOW-FREQUENCY AMPLIFICATION) |
| KTD-185 | 制造商:Kings Electronics 功能描述: |
| KTD1854T | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR |
| KTD1863 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE) |
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