參數(shù)資料
型號: KTC4511
廠商: KEC Holdings
英文描述: EPITAXIAL PLANAR NPN TRANSISTOR (HIGH POWER AMPLIFIER)
中文描述: 外延平面NPN晶體管(高功率放大器)
文件頁數(shù): 1/3頁
文件大?。?/td> 488K
代理商: KTC4511
2002. 6. 5
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC4511
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
Complementary to KTA1725.
MAXIMUM RATING (Ta=25
)
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
MILLIMETERS
10.30 MAX
15.30 MAX
2.70
0.30
0.85 MAX
3.20
0.20
3.00
0.30
12.30 MAX
0.75 MAX
13.60
0.50
3.90 MAX
1.20
1.30
2.54
4.50
0.20
6.80
2.60
0.20
10
25
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
F
O
Q
1
2
3
L
P
N
B
G
J
M
D
N
T
T
H
E
R
T
V
S
K
L
U
V
T
0.5
5
2.60
0.15
U
D
A
C
ELECTRICAL CHARACTERISTICS (Ta=25
)
Note : h
FE
Classification R:55~110, O:80~160.
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
80
V
Collector-Emitter Voltage
V
CEO
80
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
I
C
6
A
Base Current
I
B
3
A
Collector Power Dissipation (Tc=25
)
P
C
30
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=80V, I
E
=0
-
-
10
A
Emitter Cut-off Current
I
EBO
V
EB
=6V, I
C
=0
-
-
10
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=25mA, I
B
=0
80
-
-
V
DC Current Gain
h
FE
(Note)
V
CE
=4V, I
C
=2A
55
-
160
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=2A, I
B
=0.2A
-
-
0.5
V
Transition Frequency
f
T
V
CE
=12V, I
C
=0.5A
-
20
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
150
-
pF
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