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參數(shù)資料
| 型號(hào)： | KTC4512 |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR NPN TRANSISTOR (HIGH POWER AMPLIFIER) |
| 中文描述： | 外延平面NPN晶體管（高功率放大器） |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 79K |
| 代理商： | KTC4512 |
1999. 6. 24
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC4512
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
Recommended for 30W
35W Audio Frequency
Amplifier Output Stage.
Complementary to KTA1726.
MAXIMUM RATING (Ta=25
)
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
MILLIMETERS
10.30 MAX
15.30 MAX
0.80
Φ
3.60 0.20
3.00
6.70 MAX
13.60 0.50
5.60 MAX
1.37 MAX
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
TO-220AB
0.50
1.50 MAX
2.54
4.70 MAX
2.60
1.50 MAX
1.50
9.50 0.20
8.00 0.20
2.90 MAX
A
R
S
E
M
M
1
2
3
F
B
G
H
L
C
K
J
O
N
P
D
Q
C
T
+
+
+
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
Note : h
FE
Classification R:55~110, O:80~160.
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
80
V
Collector-Emitter Voltage
V
CEO
80
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
I
C
6
A
Base Current
I
B
3
A
Collector Power Dissipation (Tc=25
)
P
C
50
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=80V, I
E
=0
-
-
10
A
Emitter Cut-off Current
I
EBO
V
EB
=6V, I
C
=0
-
-
10
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=25mA, I
B
=0
80
-
-
V
DC Current Gain
h
FE
(Note)
V
CE
=4V, I
C
=2A
55
-
160
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=2A, I
B
=0.2A
-
-
0.5
V
Transition Frequency
f
T
V
CE
=12V, I
C
=0.5A
-
20
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
150
-
pF
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