參數(shù)資料
型號: KTC2815D
廠商: KEC Holdings
英文描述: EPITAXIAL PLANAR NPN TRANSISTOR (POWER AMPLIFIER, POWER SWITCHING)
中文描述: 外延平面NPN晶體管(功率放大器,功率開關(guān))
文件頁數(shù): 1/3頁
文件大?。?/td> 405K
代理商: KTC2815D
2003. 3. 27
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC2815D/L
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
POWER AMPLIFIER APPLICATION.
POWER SWITCHING APPLICATION.
FEATURES
Low Collector Saturation Voltage
: V
CE(sat)
=0.5V(Max.) (I
C
=1A)
High Speed Switching Time : t
stg
=1 S(Typ.)
Complementary to KTA1718D/L.
MAXIMUM RATING (Ta=25
)
DPAK
DIM
A
B
C
D
MILLIMETERS
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
+
+
+
F
H
I
J
K
L
M
O
P
Q
2.70 0.2
2.30 0.1
1.00 MAX
2.30 0.2
0.5 0.1
2.00 0.20
+
+
+
+
+
0.50 0.10
0.91 0.10
0.90 0.1
1.00 0.10
0.95 MAX
E
A
C
D
B
E
K
I
J
Q
H
F
F
M
O
P
L
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
+
+
+
+
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
Note : h
FE
(1) Classification O:70~140, Y:120~240.
DIM
A
B
C
D
E
F
G
H
I
J
K
MILLIMETERS
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
9.50 0.6
2.30 0.1
0.76 0.1
1.0 MAX
2.30 0.2
0.5 0.1
2.0 0.2
+
+
IPAK
D
B
Q
E
H
F
F
C
A
P
L
I
J
1
2
3
L
P
Q
0.50 0.1
1.0 0.1
0.90 MAX
G
1. BASE
2. COLLECTOR
3. EMITTER
K
+
+
+
+
+
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
2
A
Emitter Current
I
E
-2
A
Collector Power
Dissipation
Ta=25
P
C
1.0
W
Tc=25
10
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
I
CBO
I
EBO
V
(BR)CEO
h
FE
(1) (Note)
h
FE
2
V
CE(sat)
V
BE(sat)
f
T
C
ob
TEST CONDITION
V
CB
=50V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=10mA, I
B
=0
V
CE
=2V, I
C
=0.5A
V
CE
=2V, I
C
=1.5A
I
C
=1A, I
B
=0.05A
I
C
=1A, I
B
=0.05A
V
CE
=2V, I
C
=0.5A
V
CB
=10V, I
E
=0, f=1MHz
MIN.
-
-
50
70
40
-
-
-
-
TYP. MAX. UNIT
-
0.1
-
0.1
-
-
-
240
-
-
-
0.5
-
1.2
100
-
30
-
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
A
A
V
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
V
V
MHz
pF
Switching
Time
Turn On Time
t
on
I
B1
3
B1
I
V =30V
I
B2
I
B2
20
μ
sec
I =-I =-0.05A
DUTY CYCLE
1%
OUTPUT
INPUT
<
-
0.1
-
S
Storage Time
t
stg
-
1.0
-
Fall Time
t
f
-
0.1
-
相關(guān)PDF資料
PDF描述
KTC2815L EPITAXIAL PLANAR NPN TRANSISTOR (POWER AMPLIFIER, POWER SWITCHING)
KTC2874 SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(FOR MUTING AND SWITCHING)
KTC2875 SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(FOR MUTING AND SWITCHING)
KTC2983D EPITAXIAL PLANAR NPN TRANSISTOR (HIGH VOLTAGE)
KTC2983L EPITAXIAL PLANAR NPN TRANSISTOR (HIGH VOLTAGE)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KTC2815L 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR (POWER AMPLIFIER, POWER SWITCHING)
KTC2825D 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR
KTC2874 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE
KTC2874_03 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE
KTC2875 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR