參數(shù)資料
型號(hào)： KTC2983D
廠商： KEC Holdings
英文描述： EPITAXIAL PLANAR NPN TRANSISTOR (HIGH VOLTAGE)
中文描述： 外延平面NPN晶體管（高壓）
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 398K
代理商： KTC2983D
2003. 3. 27
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC2983D/L
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
HIGH VOLTAGE APPLICATION.
FEATURES
High Transition Frequency : f
T
=100MHz(Typ.).
Complementary to KTA1225D/L.
MAXIMUM RATING (Ta=25
)
DPAK
DIM
MILLIMETERS
+
+
+
+
+
+
A
B
C
D
F
H
I
J
K
L
M
O
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
2.70 0.2
2.30 0.1
1.00 MAX
+
+
+
+
+
+
+
2.30 0.2
0.5 0.1
2.00 0.20
0.50 0.10
0.91 0.10
0.90 0.1
E
A
C
D
B
E
K
I
J
Q
H
F
F
M
O
P
L
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
1.00 0.10
0.95 MAX
P
Q
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
160
V
Collector-Emitter Voltage
V
CEO
160
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
1.5
A
Base Current
I
B
1.0
A
Collector Power
Dissipation
Ta=25
P
C
1.0
W
Tc=25
10
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=160V, I
E
=0
-
-
1.0
A
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
1.0
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=10mA, I
B
=0
160
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=1mA, I
C
=0
5.0
-
-
V
DC Current Gain
h
FE
(Note)
V
CE
=5V, I
C
=100mA
70
-
240
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=500mA, I
B
=50mA
-
-
1.5
V
Base-Emitter Voltage
V
BE
V
CE
=5V, I
C
=500mA
-
-
1.0
V
Transition Frequency
f
T
V
CE
=10V, I
C
=100mA
-
100
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
25
-
pF
Note : h
FE
Classification O:70~140, Y:120~240
DIM
A
B
C
D
MILLIMETERS
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
+
+
IPAK
D
B
Q
E
H
F
F
C
A
P
L
I
J
1
2
3
E
F
G
H
I
J
K
L
P
Q
9.50 0.6
2.30 0.1
0.76 0.1
1.0 MAX
2.30 0.2
0.5 0.1
2.0 0.2
+
0.50 0.1
1.0 0.1
0.90 MAX
G
1. BASE
2. COLLECTOR
3. EMITTER
K
+
+
+
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