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參數(shù)資料
| 型號： | KTC2022L |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE) |
| 中文描述： | 外延平面NPN晶體管（通用） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 394K |
| 代理商： | KTC2022L |
2003. 3. 27
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC2022D/L
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 4
GENERAL PURPOSE APPLICATION.
FEATURES
Low Collector-Emitter Saturation Voltage
: V
CE(sat)
=-2.0V(Max.).
Complementary to KTA1042D/L.
MAXIMUM RATING (Ta=25
)
DPAK
DIM
A
B
C
D
MILLIMETERS
6.60 0.2
5.0 0.2
1.10 0.2
+
+
+
F
H
I
J
K
L
M
O
P
Q
2.70 0.2
2.30 0.1
1.00 MAX
+
+
+
+
+
+
+
2.30 0.2
0.5 0.1
2.00 0.20
0.50 0.10
0.91 0.10
0.90 0.1
1.00 0.10
0.95 MAX
E
A
C
D
B
E
K
I
J
Q
H
F
F
M
O
P
L
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
+
+
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
Note : h
FE
(1) Classification 0:70~140, Y:120~240.
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
100
V
Collector-Emitter Voltage
V
CEO
100
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
5
A
Base Current
I
B
0.5
A
Collector Power Dissipation (Tc=25
)
P
C
20
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=100V, I
E
=0
-
-
100
A
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
1.0
mA
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=50mA, I
B
=0
100
-
-
V
DC Current Gain
h
FE
(1) (Note)
V
CE
=5V, I
C
=1A
70
-
240
h
FE
(2)
V
CE
=5V, I
C
=4A
20
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=4A, I
B
=0.4A
-
-
2.0
V
Base-Emitter Voltage
V
BE
V
CE
=5V, I
C
=1A
-
-
1.5
V
Transition Frequency
f
T
V
CE
=5V, I
C
=1A
-
30
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
40
-
pF
DIM
A
B
C
D
E
F
G
H
I
J
K
MILLIMETERS
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
9.50 0.6
2.30 0.1
0.76 0.1
1.0 MAX
2.30 0.2
0.5 0.1
2.0 0.2
+
+
IPAK
D
B
Q
E
H
F
F
C
A
P
L
I
J
1
2
3
L
P
Q
0.50 0.1
1.0 0.1
0.90 MAX
G
1. BASE
2. COLLECTOR
3. EMITTER
K
+
+
+
+
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