參數(shù)資料
型號(hào)： KTC2025L
廠商： KEC Holdings
英文描述： EPITAXIAL PLANAR NPN TRANSISTOR (LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING)
中文描述： 外延平面NPN晶體管（低頻功率放大器，中速開(kāi)關(guān)）
文件頁(yè)數(shù)： 1/2頁(yè)
文件大小： 399K
代理商： KTC2025L
2003. 3. 27
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC2025D/L
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
LOW FREQUENCY POWER AMP,
MEDIUM SPEED SWITCHING APPLICATIONS
FEATURES
High breakdown voltage V
CEO
120V, high current 1A.
Low saturation voltage and good linearity of h
FE
.
Complementary to KTA1045D/L
MAXIMUM RATING (Ta=25
)
DPAK
DIM
A
B
C
D
E
MILLIMETERS
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
2.70 0.2
2.30 0.1
1.00 MAX
2.30 0.2
0.5 0.1
2.00 0.20
0.50 0.10
0.91 0.10
0.90 0.1
1.00 0.10
0.95 MAX
F
H
I
J
K
L
M
O
P
Q
A
C
D
B
E
K
I
J
Q
H
F
F
M
O
P
L
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
+
+
+
+
+
+
+
+
+
+
+
+
+
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
Collector Cut of Current
Emitter Cut of Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
)
(Note) : h
FE
(1) Classification Y:100
200, GR:160
320
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
120
V
Collector-Emitter Voltage
V
CEO
120
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
1
A
I
CP
2
Collector Power
Dissipation
Ta=25
P
C
1.0
W
Tc=25
8
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
SYMBOL
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
h
FE
(1) Note
h
FE
(2)
f
T
C
ob
V
CE(sat)
V
BE(sat)
TEST CONDITION
V
CB
=50V, I
E
=0
V
EB
=4V, I
C
=0
I
C
=10 A, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10 A, I
C
=0
V
CE
=5V, I
C
=50mA
V
CE
=5V, I
C
=500mA
V
CE
=10V, I
C
=50mA
V
CB
=10V, I
E
=0, f=1MHz
I
C
=500mA, I
B
=50mA
I
C
=500mA, I
B
=50mA
MIN.
-
-
120
120
5
100
20
-
-
-
-
TYP.
-
-
-
-
-
-
-
130
20
0.15
0.85
MAX.
1
1
-
-
-
320
-
-
-
0.4
1.2
UNIT
A
A
V
V
V
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
MHz
pF
V
V
Switching Time
Turn-on Time
t
on
-
100
-
nS
Turn-off Time
t
off
-
500
-
Storage Time
t
stg
-
700
-
I
B2
B1
I
20u sec
1uF
1uF
24
1
1
100
I =10I =-10I =500mA
C
V =12V
-2V
12V
DIM
A
B
C
D
E
F
G
H
I
J
K
MILLIMETERS
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
9.50 0.6
2.30 0.1
0.76 0.1
1.0 MAX
2.30 0.2
0.5 0.1
2.0 0.2
+
+
+
IPAK
D
B
Q
E
H
F
F
C
A
P
L
I
J
1
2
3
L
P
Q
0.50 0.1
1.0 0.1
0.90 MAX
G
1. BASE
2. COLLECTOR
3. EMITTER
K
+
+
+
+
+
+
+
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