參數(shù)資料
型號(hào): KTC1804
廠商: KEC Holdings
英文描述: EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING)
中文描述: 外延平面NPN晶體管(大電流開(kāi)關(guān))
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 407K
代理商: KTC1804
2003. 3. 27
2/4
KTC1804D/L
Revision No : 2
ELECTRICAL CHARACTERISTICS (Ta=25
)
Note : h
FE
Classification O:100~200, Y:140~280, GR:200~400.
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=40V, I
E
=0
-
-
1
A
Emitter Cut-off Current
I
EBO
V
EB
=4V, I
C
=0
-
-
1
A
DC Current Gain
h
FE
(1) (Note)
V
CE
=2V, I
C
=0.5A
100
-
400
h
FE
(2)
V
CE
=2V, I
C
=6A
35
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=4A, I
B
=0.2A
-
200
400
mV
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=4A, I
B
=0.2A
-
0.95
1.3
mV
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=10 A, I
E
=0
60
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=1mA, R
BE
=
50
V
Emitter-base Breakdown Voltage
V
(BR)EBO
I
E
=10 A, I
C
=0
6
-
-
V
Gain-Bandwidth Product
f
T
V
CE
=5V, I
C
=1A
-
180
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
65
-
pF
Switching
Time
Turn On Time
t
on
I
B1
6
B1
I
V =25V
I
B2
I
B2
20
μ
sec
I =-I =0.4A
DUTY CYCLE
1%
OUTPUT
INPUT
<
-
50
-
nS
Storage Time
t
stg
-
500
-
Fall Time
t
f
-
20
-
相關(guān)PDF資料
PDF描述
KTC1804D EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING)
KTC1804L EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING)
KTC2016 EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE)
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參數(shù)描述
KTC1804D 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING)
KTC1804L 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING)
KTC200 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)
KTC2016 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE)
KTC2018 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE)