參數(shù)資料
型號: KTC1804D
廠商: KEC Holdings
英文描述: EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING)
中文描述: 外延平面NPN晶體管(大電流開關(guān))
文件頁數(shù): 1/4頁
文件大?。?/td> 407K
代理商: KTC1804D
2003. 3. 27
1/4
SEMICONDUCTOR
TECHNICAL DATA
KTC1804D/L
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
HIGH CURRENT SWITCHING APPLICATION.
APPLICATION
Relay drivers, high-speed inverters, converters, and other
general high-current switching applications.
FEATURES
Low Collector Emitter Saturation Voltage.
: V
CE(sat)
=0.4V(Max.) (I
C
=4A)
High Current and High f
T
: I
C
=8A, f
T
=180MHz.
Excellent Linearity of h
FE
High Speed Switching Time.
: f
T
=20nS (Typ.)
Complementary to KTA1204D/L
MAXIMUM RATING (Ta=25
)
DPAK
DIM
MILLIMETERS
+
+
+
+
+
+
A
B
C
D
F
H
I
J
K
L
M
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
2.70 0.2
2.30 0.1
1.00 MAX
+
+
+
+
+
+
+
2.30 0.2
0.5 0.1
2.00 0.20
0.50 0.10
0.91 0.10
E
0.90 0.1
O
A
C
D
B
E
K
I
J
Q
H
F
F
M
O
P
L
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
1.00 0.10
0.95 MAX
P
Q
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
60
V
Emitter-Base Voltag
V
EBO
6
V
Collector Current
DC
I
C
8
A
Pulse
I
CP
12
Collector Power
Dissipation
Ta=25
P
C
1.0
W
Tc=25
20
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
DIM
A
B
MILLIMETERS
6.60 0.2
6.10 0.2
+
+
+
+
IPAK
D
B
Q
E
H
F
F
C
A
P
L
I
J
1
2
3
C
D
E
F
G
H
I
J
L
P
Q
5.0 0.2
1.10 0.2
9.50 0.6
2.30 0.1
0.76 0.1
1.0 MAX
+
+
2.30 0.2
0.5 0.1
0.50 0.1
1.0 0.1
0.90 MAX
G
1. BASE
2. COLLECTOR
3. EMITTER
K
2.0 0.2
K
+
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