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參數(shù)資料
| 型號(hào)： | KTB598 |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR PNP TRANSISTOR (LOW FREQUENCY POWER AMP, CONVERTER ELECTRONIC GOVERNOR) |
| 中文描述： | 外延平面PNP晶體管（低頻功率放大器，轉(zhuǎn)爐電子調(diào)速器） |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 68K |
| 代理商： | KTB598 |
1999. 8. 7
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTB598
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
LOW FREQUENCY POWER AMP, CONVERTER
ELECTRONIC GOVERNOR APPLICATIONS
FEATURES
Low Saturation Voltage
: V
CE(sat)
=-0.3V(Max.) at I
C
=-0.5A.
Complementary to KTD545.
MAXIMUM RATING (Ta=25
)
TO-92
DIM
A
B
C
D
E
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
0.45 MAX
1.00
F
G
H
J
K
L
M
N
D
1 2
3
B
A
J
K
G
H
F
F
L
C
E
C
M
N
1. EMITTER
2. COLLECTOR
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-20V, I
E
=0
-
-
-0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-0.1
A
DC Current Gain
h
FE
(1) (Note)
V
CE
=-2V, I
C
=-50mA
70
-
400
h
FE
(2)
V
CE
=-2V, I
C
=-1A(Pulse)
30
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-500mA, I
B
=-50mA
-
-0.15
-0.3
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=-500mA, I
B
=-50mA
-
-0.85
-1.2
V
Transition Frequency
f
T
V
CE
=-10V, I
C
=-50mA
-
180
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
25
-
pF
Note : h
FE
Classification O:70
140, Y:120
240, GR:200
400
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-30
V
Collector-Emitter Voltage
V
CEO
-25
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-1
A
Collector Power Dissipation
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
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