參數(shù)資料
型號(hào)： KTB764
廠商： KEC Holdings
英文描述： TRIPLE DIFFUSED PNP TRANSISTOR(VOLTAGE REGULATOR, RELAY, RAMP DRIVER, INDUSTRIAL USE)
中文描述： 三重?cái)U(kuò)散PNP晶體管（調(diào)壓器，繼電器，斜坡驅(qū)動(dòng)，工業(yè)用）
文件頁數(shù)： 1/3頁
文件大小： 80K
代理商： KTB764
1999. 11. 30
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTB764
TRIPLE DIFFUSED PNP TRANSISTOR
Revision No : 2
VOLTAGE REGULATOR, RELAY,
RAMP DRIVER, INDUSTRIAL USE
FEATURES
High Voltage : V
CEO
=-50V(Min.).
High Current : I
C
(Max.)=-1A.
High Transition Frequency : f
T
=150MHz(Typ.).
Wide Area of Safe Operation.
Complementary to KTD863.
MAXIMUM RATING (Ta=25
)
DIM
A
B
C
MILLIMETERS
7.20 MAX
5.20 MAX
0.60 MAX
D
E
F
G
H
J
K
L
M
N
1. EMITTER
2. COLLECTOR
3. BASE
P
Q
R
S
TO-92L
2.50 MAX
1.15 MAX
1.27
1.70 MAX
0.55 MAX
14.00 0.50
0.35 MIN
0.75 0.10
4
25
1.25
Φ
1.50
0.10 MAX
12.50 0.50
1.00
O
DEPTH:0.2
1
2
3
B
A
C
Q
K
F
F
M
M
N
N
O
H
L
J
D
G
P
H
H
E
D
H
R
S
+
+
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
Note : h
FE
(1) Classification O:60
120, Y:100
200, GR:160
320
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-60
V
Collector-Emitter Voltage
V
CEO
-50
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
DC
I
C
-1
A
Pulse
I
CP
-2
Collector Power Dissipation
P
C
1
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-50V, I
E
=0
-
-
-1
A
Emitter Cut-off Current
I
EBO
V
EB
=-4V, I
C
=0
-
-
-1
A
DC Current Gain
h
FE
(1)
V
CE
=-2V, I
C
=-50mA
60
-
320
h
FE
(2)
V
CE
=-2V, I
C
=-1A
30
-
-
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-1mA, I
B
=0
-50
-
-
V
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-500mA, I
B
=-50mA
-
-0.2
-0.7
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=-500mA, I
B
=-50mA
-
-0.85
-1.2
V
Transition Frequency
f
T
V
CE
=-10V, I
C
=-50mA
-
150
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
20
-
pF
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