參數(shù)資料
型號(hào): KTA702E
廠商: KEC Holdings
英文描述: EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)
中文描述: 外延平面NPN晶體管(通用,開關(guān))
文件頁(yè)數(shù): 1/3頁(yè)
文件大?。?/td> 73K
代理商: KTA702E
2002. 2. 20
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTA702E
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
A Collector Current is Large.
Collector Saturation Voltage is low.
: V
CE(sat)
-250mV at I
C
=-200mA/I
B
=-10mA.
Complementary to KTC802E.
MAXIMUM RATINGS (Ta=25
)
DIM
A
A1
B
MILLIMETERS
1.6 0.05
1.0 0.05
1.6 0.05
1.2 0.05
0.50
0.2 0.05
0.5 0.05
0.12 0.05
5
B1
C
D
H
J
P
TES6
B1
B
D
A
A
C
C
J
H
1
2
3
6
4
P
P
5
+
+
+
+
+
+
+
1. Q EMITTER
2. Q BASE
3. Q COLLECTOR
4. Q EMITTER
5. Q BASE
6. Q COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-15
V
Collector-Emitter Voltage
V
CEO
-12
V
Emitter-Base Voltage
V
EBO
-6
V
Collector Current
I
C
-500
mA
I
CP
(Note)
-1
A
Collector Power Dissipation
P
C
*
200
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
1
Q1
Q2
2
3
6
5
4
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-15V, I
E
=0
-
-
-100
nA
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=-10
A
-15
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-1mA
-12
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=-10
A
-6
-
-
V
DC Current Gain
h
FE
V
CE
=-2V, I
C
=-10mA
270
-
680
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-200mA, I
B
=-10mA
-
100
-250
mV
Transition Frequency
f
T
V
CE
=-2V, I
C
=-10mA, f
T
=100MHz
-
260
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
6.5
-
pF
Note : Single pulse Pw=1mS.
* Total Rating.
EQUIVALENT CIRCUIT (TOP VIEW)
S Z
Type Name
1
2
3
4
6
5
Marking
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