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參數(shù)資料
| 型號(hào)： | KTA708 |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR PNP TRANSISTOR (VOLTAGE REGULATOR RELAY RAMP DRIVER, INDUSTRIAL USE) |
| 中文描述： | 外延平面PNP晶體管（斜坡電壓調(diào)節(jié)器繼電器驅(qū)動(dòng)器，工業(yè)用） |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 76K |
| 代理商： | KTA708 |
1999. 11. 30
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTA708
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
VOLTAGE REGULATOR, RELAY,
RAMP DRIVER, INDUSTRIAL USE
FEATURES
High Voltage : V
CEO
=-60V(Min.).
High Current : I
C
(Max.)=-1A.
High Transition Frequency : f
T
=150MHz(Typ.).
Wide Area of Safe Operation.
Complementary to KTC1008.
MAXIMUM RATING (Ta=25
)
TO-92
DIM
A
B
C
D
E
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
0.45 MAX
1.00
F
G
H
J
K
L
M
N
D
1 2
3
B
A
J
K
G
H
F
F
L
C
E
C
M
N
1. EMITTER
2. COLLECTOR
3. BASE
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-80
V
Collector-Emitter Voltage
V
CEO
-60
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
DC
I
C
-1
A
Pulse
I
CP
-2
Collector Power Dissipation
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-50V, I
E
=0
-
-
-100
nA
Emitter Cut-off Current
I
EBO
V
EB
=-4V, I
C
=0
-
-
-100
nA
DC Current Gain
h
FE
(1)
V
CE
=-2V, I
C
=-50mA
60
-
200
h
FE
(2)
V
CE
=-2V, I
C
=-1A
30
-
-
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-1mA, I
B
=0
-60
-
-
V
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-500mA, I
B
=-50mA
-
-0.2
-0.7
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=-500mA, I
B
=-50mA
-
-0.85
-1.2
V
Transition Frequency
f
T
V
CE
=-10V, I
C
=-50mA
-
150
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
12
-
pF
Note : h
FE
(1) Classification O:60
120, Y:100
200
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| KTA712E | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING) |
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