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參數(shù)資料
| 型號： | KSH30C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | General Purpose Amplifier Low Speed Switching Applications |
| 中文描述： | 1 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 50K |
| 代理商： | KSH30C |
2002 Fairchild Semiconductor Corporation
Rev. B3, October 2002
K
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
V
CEO
(sus)
Collector-Emitter Sustaining Voltage
* Pulse Test: PW
≤
300ms, Duty Cycle
≤
2%
Parameter
Value
Units
: KSH30
: KSH30C
- 40
- 100
V
V
V
CEO
Collector-Emitter Voltage
: KSH30
: KSH30C
- 40
- 100
- 5
- 1
- 3
- 0.4
15
1.56
150
- 65 ~ 150
V
V
V
A
A
A
W
W
°
C
°
C
V
EBO
I
C
I
CP
I
B
P
C
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25
°
C)
Collector Dissipation (Ta=25
°
C)
Junction Temperature
Storage Temperature
T
J
T
STG
Test Condition
Min.
Max.
Units
: KSH30
: KSH30C
I
C
= - 30mA, I
B
= 0
- 40
- 100
V
V
I
CEO
Collector Cut-off Current
: KSH30
: KSH30C
V
CE
= - 40V, I
B
= 0
V
CE
= - 60V, I
B
= 0
- 50
- 50
μ
A
μ
A
I
CES
Collector Cut-off Current
: KSH30
: KSH30C
V
CE
= - 40V, V
BE
= 0
V
CE
= 100V, V
BE
= 0
V
BE
= - 5V, I
C
= 0
V
CE
= - 4V, I
C
= - 0.2A
V
CE
= - 4V, I
C
= - 1A
I
C
= - 1A, I
B
= - 125mA
V
CE
= - 4A, I
C
= - 1A
V
CE
= - 10V, I
C
= - 200mA
- 20
- 20
- 1
μ
A
μ
A
mA
I
EBO
h
FE
Emitter Cut-off Current
* DC Current Gain
40
15
75
- 0.7
- 1.3
V
CE
(sat)
V
BE
(on)
f
T
* Collector-Emitter Saturation Voltage
* Base-Emitter On Voltage
Current Gain Bandwidth Product
V
V
3
MHz
KSH30/30C
General Purpose Amplifier
Low Speed Switching Applications
Lead Formed for Surface Mount Application (No Suffix)
Straight Lead (I-PAK, “- I” Suffix)
Electrically Similar to Popular TIP30 and TIP30C
1.Base 2.Collector 3.Emitter
D-PAK
I-PAK
1
1
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| KSH30CITU | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSH30CTF | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSH30TF | 功能描述:兩極晶體管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSH31 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:General Purpose Amplifier Low Speed Switching Applications |
| KSH31C | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:General Purpose Amplifier Low Speed Switching Applications |
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