參數(shù)資料
型號： KSH32C
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications
中文描述： 3 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-252
封裝： DPAK-3
文件頁數(shù)： 1/6頁
文件大小： 55K
代理商： KSH32C
2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
K
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage : KSH32
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
Symbol
Parameter
V
CEO
(sus)
* Collector-Emitter Sustaining Voltage
* Pulse Test: PW
≤
300
μ
s, Duty Cycle
≤
2%
Parameter
Value
- 40
- 100
- 40
- 100
- 5
- 3
- 5
- 1
15
1.56
150
- 65 ~ 150
Units
V
V
V
V
V
A
A
A
W
W
°
C
°
C
: KSH32C
V
CEO
Collector-Emitter Voltage : KSH32
: KSH32C
V
EBO
I
C
I
CP
I
B
P
C
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25
°
C)
Collector Dissipation (T
a
=25
°
C)
Junction Temperature
Storage Temperature
T
J
T
STG
Test Condition
Min.
Max.
Units
: KSH32
: KSH32C
I
C
= - 30mA, I
B
= 0
-40
-100
V
V
I
CEO
Collector Cut-off Current
: KSH32
: KSH32C
V
CE
= - 40V, I
B
= 0
V
CE
= - 60V, I
B
= 0
-50
-50
μ
A
μ
A
I
CES
Collector Cut-off Current
: KSH32
: KSH32C
V
CE
= - 40V, V
BE
= 0
V
CE
= - 100V, V
BE
= 0
V
BE
= - 5V, I
C
= 0
V
CE
= - 4V, I
C
= - 1A
V
CE
= - 4V, I
C
= - 3A
I
C
= - 3, I
B
= - 375mA
V
CE
= - 4A, I
C
= - 3A
V
CE
= -10V, I
C
= - 500mA
-20
-20
-1
μ
A
μ
A
mA
I
EBO
h
FE
Emitter Cut-off Current
* DC Current Gain
25
10
50
-1.2
-1.8
V
CE
(sat)
V
BE
(on)
f
T
* Collector-Emitter Saturation Voltage
* Base-Emitter On Voltage
Current Gain Bandwidth Product
V
V
3
MHz
KSH32/32C
General Purpose Amplifier Low Speed
Switching Applications
D-PAK for Surface Mount Applications
Lead Formed for Surface Mount Application (No Suffix)
Straight Lead (I-PAK, “- I” Suffix)
Electrically Similar to Popular TIP32 and TIP32C
1.Base 2.Collector 3.Emitter
D-PAK
I-PAK
1
1
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KSH32CTF 功能描述:兩極晶體管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
KSH32TF 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
KSH340 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:High Voltage Power Transistors D-PAK for Surface Mount Applications
KSH340TF 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
KSH350 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:High Voltage Power Transistors D-PAK for Surface Mount Applications
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